Microscopic defects in silicon induced by zinc out-diffusion

Giese, A.; Bracht, H.; Stolwijk, N. A.; Baither, D.

doi:10.1016/s0921-5107(99)00367-0

Cited by 21 publications

(19 citation statements)

References 19 publications

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“…2b. For 1107 and 1207 • C the fit is not as good, probably due to precipitation of Zn in the sample bulk that seems to occur at a higher T [13]. The deduced values of P V /P I are shown by filled rhombus in Fig.…”

Section: Out-diffusion Profiles Of Znmentioning

confidence: 95%

“…Profiles of Zn s are available [13] at 904, 1004, 1107 and 1207 • C. The technique was to determine the hole concentration profile p(z) by spreading resistance profiling (SRP). To convert p(z) into the acceptor profile C s (z), one should know the position of the first deep energy level of Zn s and the degeneracy factors of the two major charge states, neutral and single negative.…”

Section: Out-diffusion Profiles Of Znmentioning

confidence: 99%

“…These factors are not definite, and an expression for C s through p contains a factor of indefinite accuracy. Moreover, the Zn s acceptors were "activated" by a pre-anneal [13] which adds another unknown factor, a degree of activation. The SRPbased acceptor concentration C sr can thus differ from the true concentration C s .…”

Section: Out-diffusion Profiles Of Znmentioning

confidence: 99%

See 2 more Smart Citations

Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion

Voronkov

Falster

2006

Materials Science and Engineering: B

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Section: Out-diffusion Profiles Of Znmentioning

confidence: 95%

Section: Out-diffusion Profiles Of Znmentioning

confidence: 99%

Section: Out-diffusion Profiles Of Znmentioning

confidence: 99%

See 1 more Smart Citation

Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion

Voronkov

Falster

2006

Materials Science and Engineering: B

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“…This condition is realized in out-diffusion experiments where the concentration of the substitutional foreign-atom in the bulk exceeds its concentration at the surface (see e.g. [101,102]). …”

Section: Diffusion Under Local Equilibrium Conditionsmentioning

confidence: 99%

Diffusion and Point Defects in Silicon Materials

Bracht

2015

Lecture Notes in Physics

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This chapter aims to provide a basic understanding on the complex diffusion behavior of self-, dopant-, and selected metal atoms in silicon (Si). The complexity of diffusion in Si becomes evident in the shape of self-and foreign-atom diffusion profiles that evolves under specific experimental conditions. Diffusion studies attempt to determine from the diffusion behavior not only the mechanisms of atomic transport but also the type of the point defects involved. This information is of pivotal interest to control the diffusion and activation of dopants during the fabrication of Si-based devices and, from a more fundamental scientific point of view, for comparison to the predictions of theoretical calculations on the properties of point defects in Si. In general, diffusion research relies both on experimental methods to accurately determine diffusion profiles established under well-defined conditions. The analysis of diffusion profiles that can be based on either analytical or numerical solutions of the considered diffusion-reaction equations provides first information about possible diffusion mechanisms. To identify the mechanisms of diffusion, studies under different experimental conditions have to be performed. This chapter on diffusion in Si starts with an introduction on the significance of diffusion research in semiconductors to determine the properties of atomic defects. Diffusion in solids is treated from a phenomenological and atomistic point of view. Experiments designed to investigate the diffusion of self-and foreign atoms are presented and typical self-and foreign-atom profiles obtained after diffusion annealing under specific conditions are illustrated. The mathematical treatment of diffusion-reaction mechanisms is introduced to understand the shape of diffusion profiles and the meaning of the diffusion coefficient deduced from experiments. Modeling of self-, dopant-, and metal-atom diffusion is described that aims at a consistent interpretation of atomic transport processes in Si based on unified properties of the native point defects involved. Finally, till unsolved questions on the properties of point defects in bulk Si and on the diffusion behavior in threedimensional confined Si structures are addressed.

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“…Comparison of the self-diffusion data with the individual contributions of self-interstitials and vacancies to Si diffusion, which were obtained from Zn-diffusion experiments [10,11,12,13], demonstrate that Si diffusion is mainly mediated by self-interstitials in the temperature range investigated. Relative to the interstitial contribution to self-diffusion, the contribution of vacancies increases with decreasing temperature and approaches the interstitial contribution at temperatures below 1200 K. The individual contributions to Si self-diffusion can be further separated into the contributions of the existing charge states of the native defects.…”

Section: Self-diffusion In Simentioning

confidence: 89%

Advanced diffusion studies with isotopically controlled materials

Bracht

Silvestri

Häller

2005

Solid State Communications

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The use of enriched stable isotopes combined with modern epitaxial deposition and depth profiling techniques enables the preparation of material heterostructures, highly appropriate for self-and foreign-atom diffusion experiments. Over the past decade we have performed diffusion studies with isotopically enriched elemental and compound semiconductors. In the present paper we highlight our recent results and demonstrate that the use of isotopically enriched materials ushered in a new era in the study of diffusion in solids which yields greater insight into the properties of native defects and their roles in diffusion. Our approach of studying atomic diffusion is not limited to semiconductors and can be applied also to other material systems. Current areas of our research concern the diffusion in the silicon-germanium alloys and glassy materials such as silicon dioxide and ion conducting silicate glasses. * corresponding author IntroductionThe diffusion of atoms in materials is a fundamental process of mass transport that is important for numerous applications. For example, doping of silicon is often performed by the diffusion of the desired foreign-atom into the material. The current standard of very shallow dopant profiles of only a few tenths of nanometers by ion implantation requires a strong control of diffusion and reaction processes in order to minimize transient-diffusion effects [1]. With the down-scaling of Si-based electronic devices, interfaces are becoming more significant and can affect the diffusion in the bulk material of interest. In this context, the reactions occurring at the SiO 2 /Si interface are very important in order to understand the oxidation process of Si and the ability of the interface to act as a source of point defects. The large scale production of electronic and optoelectronic devices based on group III-V compound semiconductors also requires highly reproducible doping processes. To meet this requirement the reason for the often observed complicated shape of dopant profiles in compound semiconductors must be understood. These examples illustrate that a comprehensive understanding of the mechanisms of dopant diffusion and the properties of native point defects in the underlying material, which includes their generation, recombination and interaction with dopant atoms, are of fundamental significance for controlling the fabrication of electronic devices.

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Microscopic defects in silicon induced by zinc out-diffusion

Cited by 21 publications

References 19 publications

Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion

Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion

Diffusion and Point Defects in Silicon Materials

Advanced diffusion studies with isotopically controlled materials

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