Microscopic lock-in thermography investigation of leakage sites in integrated circuits

Breitenstein, O.; Langenkamp, Martin; Altmann, Frank; Katzer, D. Scott; Lindner, Andreas; Eggers, H.

doi:10.1063/1.1310345

Cited by 85 publications

(52 citation statements)

References 9 publications

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“…This technique was developed already before it was introduced to pho− tovoltaics [16] and since then mainly used in non−destruc− tive testing, hence for "looking below the surface of bodies" [17]. In the following LIT was also used for investigating local leakage currents in integrated circuits [18] and in solar cells [19]. Meanwhile, LIT is a widely used standard imag− ing method for characterizing solar cells, which is commer− cially available.…”

Section: Introductionmentioning

confidence: 99%

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Breitenstein

2013

Opto-Electronics Review

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Solar cells made from multi- or mono-crystalline silicon wafers are the base of today’s photovoltaics industry. These devices are essentially large-area semiconductor p-n junctions. Technically, solar cells have a relatively simple structure, and the theory of p-n junctions was established already decades ago. The generally accepted model for describing them is the so-called two-diode model. However, the current-voltage characteristics of industrial solar cells, particularly of that made from multi-crystalline silicon material, show significant deviations from established diode theory. These deviations regard the forward and the reverse dark characteristics as well as the relation between the illuminated characteristics to the dark ones. In the recent years it has been found that the characteristics of industrial solar cells can only be understood by taking into account local inhomogeneities of the dark current flow. Such inhomogeneities can be investigated by applying lock-in thermography techniques. Based on these and other investigations, meanwhile the basic properties of industrial silicon solar cells are well understood. This contribution reviews the most important experimental results leading to the present state of physical understanding of the dark and illuminated characteristics of multi-crystalline industrial solar cells. This analysis should be helpful for the continuing process of optimizing such cells for further increasing their energy conversion efficiency.

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Section: Introductionmentioning

confidence: 99%

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Breitenstein

2013

Opto-Electronics Review

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“…This system with 128*128 pixel resolution shows a noise level of about 20 µK after 1000s measure time and, combined with a special microscope objective, it can reach a spatial resolution of 5 µm. This was the first system which demonstrated the power of the microscopic lock-in thermography for investigating integrated circuits [6]. Based on this system Thermosensorik GmbH Erlangen [7] has developed the commercial system TDL 384 M 'Lock-in'.…”

Section: °Smentioning

confidence: 99%

Localization of weak heat sources in electronic devices using highly sensitive lock-in thermography

Rakotoniaina

Breitenstein

Langenkamp

2002

Materials Science and Engineering: B

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Using lock-in thermography the temperature resolution of a Focal Plane Array (FPA) thermocamera can be improved down to 40 µK after 1000 s measuring time. This allows the detection of even weak heat sources (hot spots) in electronic devices. The technical realization of lock-in thermography is described here with typical applications to the investigations of shunts in solar cells and localization of local heat sources in ICs. Because of its high spatial resolution, its high thermal sensivity as well as its simplicity, this technique is an advantageous alternative to usual thermal testing in electronic devices.

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“…A spatially resolved nondestructive assessment of the module performance can be undertaken with light-beam-induced current or thermographic systems [67,[84][85][86]. The light-beam-induced current technique (LBIC) maps the spatial distribution of the photocurrent in the module.…”

Section: Laser-based Characterization Methods For Tf Photovoltaicsmentioning

confidence: 99%

Laser applications in thin-film photovoltaics

et al. 2010

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We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se 2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laserbased fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH 4 ), silane radicals (SiH 3 , SiH 2 , SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

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Microscopic lock-in thermography investigation of leakage sites in integrated circuits

Cited by 85 publications

References 9 publications

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Localization of weak heat sources in electronic devices using highly sensitive lock-in thermography

Laser applications in thin-film photovoltaics

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