1999
DOI: 10.1103/physrevb.60.6710
|View full text |Cite
|
Sign up to set email alerts
|

Microscopic mechanisms of giant magnetoresistance

Abstract: We present magnetoresistance measurements aimed at answering several open questions in the understanding of giant magnetoresistance ͑GMR͒. Our measurements are performed on (F1/N/F2/N) multilayers in which N is a nonmagnetic metal ͑Cu or Cr͒, and F1 and F2 are various ferromagnetic metals or alloys. In current perpendicular to the plane ͑CPP͒ measurements on (F1/Cu/Co/Cu) multilayers, where F1 is Fe, Co, or Ni doped with impurities, we observe an inversion of the GMR for V or Cr impurities; this demonstrates, … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

10
84
0

Year Published

2001
2001
2016
2016

Publication Types

Select...
5
3

Relationship

1
7

Authors

Journals

citations
Cited by 100 publications
(95 citation statements)
references
References 40 publications
10
84
0
Order By: Relevance
“…The inverse GMR was also found in other multilayers of the type FM/Cu/Co/Cu, where FM=Ni 1-x Cr x , Co 1-x Cr x , Co 1-x Fe x and Fe 1-x V x . 81,82 The comparison of the bulk scattering spin asymmetries α FM extracted from these experiments with the previous results obtained for bulk alloys 31,32 shows that the sign of α FM is the same but the magnitude is generally much smaller. The inversion of GMR in the experiments of Hsu et al 82 and Vouille et al 81 appears to occur at thicknesses of the FM layer above a certain critical thickness, so that there was a crossover in the sign of GMR at this thickness.…”
Section: Impurity Dependencementioning
confidence: 84%
See 2 more Smart Citations
“…The inverse GMR was also found in other multilayers of the type FM/Cu/Co/Cu, where FM=Ni 1-x Cr x , Co 1-x Cr x , Co 1-x Fe x and Fe 1-x V x . 81,82 The comparison of the bulk scattering spin asymmetries α FM extracted from these experiments with the previous results obtained for bulk alloys 31,32 shows that the sign of α FM is the same but the magnitude is generally much smaller. The inversion of GMR in the experiments of Hsu et al 82 and Vouille et al 81 appears to occur at thicknesses of the FM layer above a certain critical thickness, so that there was a crossover in the sign of GMR at this thickness.…”
Section: Impurity Dependencementioning
confidence: 84%
“…81,82 The comparison of the bulk scattering spin asymmetries α FM extracted from these experiments with the previous results obtained for bulk alloys 31,32 shows that the sign of α FM is the same but the magnitude is generally much smaller. The inversion of GMR in the experiments of Hsu et al 82 and Vouille et al 81 appears to occur at thicknesses of the FM layer above a certain critical thickness, so that there was a crossover in the sign of GMR at this thickness. This was ascribed to the competition between bulk scattering in the FM, which has spin asymmetry α bulk <1, and interface scattering at the FM/Cu interface, which was assumed to have spin asymmetry α int >1.…”
Section: Impurity Dependencementioning
confidence: 84%
See 1 more Smart Citation
“…Together, theory and experiment [26][27][28][29][30] indicate that both a dilute Fe(Cr) alloy and an Fe(Cr)/Cr interface should scatter majority electrons more strongly. In this paper we show that an Fe(Cr)/Cr/Fe(Cr) trilayer displays the two behaviors described in the previous paragraph, namely a normal MR-resistance smallest in the high field P-state, but an inverted current-driven switching-positive current drives the system to the lower resistance P state and negative to the higher resistance AP state Magnetic nanopillars of approximately elliptical shape and dimensions ~ 70 nm x 130 nm were prepared by triode sputtering onto Si substrates.…”
mentioning
confidence: 99%
“…The coupling is found to be much stronger than that between continuous ferromagnetic layers. PACS: 75.70.Ak, 75.47.De, 75.75.+a GMR (giant magnetoresistance) and TMR (tunneling magnetoresistance) devices are primary candidates in future magneto-electronic applications and media [1,2,3,4,5]. The ability to create arrays of magnetic junctions on micro sized areas can enhance storage size drastically and enable the production of non volatile ultra-dense RAM chips.…”
mentioning
confidence: 99%