Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates

Pham, Anh-Tuan; Jungemann, Christoph; Meinerzhagen, B.

doi:10.1016/j.sse.2008.04.006

Cited by 34 publications

(19 citation statements)

References 15 publications

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“…The transformation between the crystallographic coordinate system and the primed coordinate system is given by [14] ⎛ ⎝ x y z ⎞ ⎠ = ⎛ ⎝ cos cos θ sin cos θ − sin θ − sin cos 0 cos sin θ sin sin θ cos θ…”

Section: Theorymentioning

confidence: 99%

“…Under this constrain the 1D k · p SE solver described in [9,14,18,19] can be used, which can handle arbitrary crystallographic orientations and stress/strain conditions [20][21][22]. The foci of this section are the efficient 2D k-space discretization and non-linear interpolation schemes.…”

Section: Efficient 2d K-space Discretization and Non-linear Interpolamentioning

confidence: 99%

“…After initialization, v ν k (k l , φ) and v ν k (k l+1 , φ) are normalized using (13) and (14). The resulting α, β are checked if they are within region M .…”

Section: Monotonic Cubic Spline Interpolation Of Subband Energymentioning

confidence: 99%

“…The deterministic method yields numerically accurate solutions, which are truly stationary in contrast to the Monte Carlo method, which is inherently transient. With this new simulator the influence of crystallographic interface and channel orientations, as well as uniaxial/biaxial strain and channel materials (Si, Ge or SiGe alloy) on maximum drive current (I ON ) has been studied [4,14]. The main purpose of this work is to provide the numerical aspects of the published device simulator [8].…”

mentioning

confidence: 99%

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On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

2009

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In this paper numerical aspects of deterministic multisubband device simulations are presented for strained double gate PMOSFETs including magnetotransport. The simulations are based on a self-consistent solution of the multisubband Boltzmann transport equation (BTE), 6 × 6 k · p Schrödinger equation (SE) and Poisson equation (PE). For accurate and efficient calculation of the subband structure, an efficient discretization of the 2D k-space combined with a monotonic cubic spline interpolation is employed. The multisubband BTE is solved with a deterministic method based on a Fourier expansion of the distribution function. The Fourier series is found to converge rapidly for nanoscale double gate PMOSFETs. A convergence enhancement method for the Gummel type SE-PE-BTE loop by solving the BTE-PE simultaneously is proposed.

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Section: Theorymentioning

confidence: 99%

Section: Efficient 2d K-space Discretization and Non-linear Interpolamentioning

confidence: 99%

“…After initialization, v ν k (k l , φ) and v ν k (k l+1 , φ) are normalized using (13) and (14). The resulting α, β are checked if they are within region M .…”

Section: Monotonic Cubic Spline Interpolation Of Subband Energymentioning

confidence: 99%

mentioning

confidence: 99%

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On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

2009

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“…The device property enhanced mainly reflects the improvement of the carrier mobility, which is highly correlated with the scattering rate decreases [8]. Consequently, the model of hole scattering rate in strained Si materials established is the theoretical foundation of research on its strengthening mechanism of hole mobility and implementing application.…”

Section: Introductionmentioning

confidence: 99%

Hole scattering mechanism of strained Si/(111)Si1−x Ge x

Wang

Zhang

Song

et al. 2011

Sci. China Phys. Mech. Astron.

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Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, the hole scattering mechanism of strained Si/(111)Si 1x Ge x was established, including ionized impurity, acoustic phonon, non-polar optical phonon and total scattering rate models. It was found that the total scattering rate of the hole in strained Si/(111)Si 1x Ge x decreased obviously with the increasing stress when energy was 0.04 eV. In comparison with one of the unstrained Si, the total hole scattering rate of strained Si/(111)Si 1x Ge x decreased about 38% at most. The decreasing hole scattering rate enhanced the hole mobility in strained Si materials. The result could provide valuable references to the research on hole mobility of strained Si materials and the design of PMOS devices.

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