Microscopic modeling of the optical properties of semiconductor nanostructures

Thränhardt, A.; Meier, Torsten; Reichelt, Matthias; Schlichenmaier, C.; Pasenow, B.; Кузнецова, И. А.; Becker, S. K.; Stroucken, T.; Hader, J.; Zakharian, Armis R.; Moloney, Jerome V.; Chow, Weng W.; Koch, S. W.

doi:10.1016/j.jnoncrysol.2006.02.064

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…For example, by monitoring the carrier thermalization process after pulsed excitation and extracting the characteristic time scales for different configurations, relaxation rates may be derived. 6,7 The results depend on intrinsic material properties such as temperature and carrier density and on the excitation conditions.…”

Section: Theorymentioning

confidence: 99%

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Quantum design and non-equilibrium effects in VECSELs

Bäumner

Koch

2011

SPIE Proceedings

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A microscopically consistent scheme for the nonequilibrium modelling of VECSELs is outlined. The theory is based on the coupled Maxwell-semiconductor-Bloch equations describing the high-intensity light field in the cavity coupled to the quantum-well gain material. Application examples are presented discussing quasi-stationary two-color operation under high intracavity power conditions. It is demonstrated that kinetic hole-burning, i.e. strong nonequilibrium deformations of the laser's carrier distributions, are responsible for the quasi-stationary dual-mode emission.

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Section: Theorymentioning

confidence: 99%

“…6,7 These rates are parametrically dependent e.g. on temperature, density and excitation energy, and have to be computed for the appropriate conditons before the laser simulation.…”

Section: Introductionmentioning

confidence: 99%

Quantum design and non-equilibrium effects in VECSELs

Bäumner

Koch

2011

SPIE Proceedings

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Microscopic Analysis of the Optical and Electronic Properties of Semiconductor Photonic‐Crystal Structures

Pasenow

Reichelt

Stroucken

et al. 2008

Nanophotonic Materials

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Microscopic analysis of the optical and electronic properties of semiconductor photonic‐crystal structures

Pasenow

Reichelt

Stroucken

et al. 2007

Physica Status Solidi (a)

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The combination of dielectric photonic crystals and semiconductor nanostructures makes it possible to design many important aspects of the optoelectronic system response. A spatially‐varying dielectric environment induces modifications of the transversal and the longitudinal components of the electromagnetic field which have to be included in the self‐consistent microscopic analysis of the optical properties of hybrid semiconductor photonic‐crystal structures. In this paper, the development of a semiclassical microscopic theory is reviewed. Whereas the classical electromagnetic field is described at the level of Maxwell's equations, a full many‐body quantum theory is used for the interacting electronic excitations in the semiconductor material. Relevant examples of the numerical solutions of the resulting Maxwell semiconductor Bloch equations are presented showing, e.g., characteristic modifications of excitonic absorption spectra, the spatio‐temporal dynamics of electronic wave packets, as well as an increase of the optical gain in properly designed device geometries. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Microscopic modeling of the optical properties of semiconductor nanostructures

Cited by 4 publications

References 23 publications

Quantum design and non-equilibrium effects in VECSELs

Quantum design and non-equilibrium effects in VECSELs

Microscopic Analysis of the Optical and Electronic Properties of Semiconductor Photonic‐Crystal Structures

Microscopic analysis of the optical and electronic properties of semiconductor photonic‐crystal structures

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