Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors

Lazanu, S.; Lazanu, I.; Bruzzi, M.

doi:10.1016/j.nima.2003.08.078

Cited by 12 publications

(10 citation statements)

References 16 publications

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“…to one correlation between measured concentration of deep level defects (V-V, V 2 O or other V-related defects) and the detector leakage current and space charge concentration [47,48]. In oxygenated Si detectors, both the leakage current and space charge concentration introduction rates were much lower, indicating that both V-V and V 2 O deep level defects are greatly suppressed due to oxygen effect, in agreement with simulation results in ref [35,36] and the proposed model. Most recently, MCZ (Magnetic Czochralski) [49] and p-type Si detectors [50] are found more radiation hard in nature.…”

Section: Material/impurity/defect Engineering (Mide)supporting

confidence: 85%

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Li¹

2009

J. Inst.

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Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, space charge concentration, and free carrier trapping. For LHC applications, where the total fluence is in the order of 1x10 15 n eq /cm 2 for 10 years, the increase in space charge concentration has been the main problem since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. For LHC Upgrade, or the SLHC, however, whit an increased total fluence up to 1x10 16 n eq /cm 2 , the main limiting factor for Si detector operation is the severe trapping of free carriers by radiation-induced defect levels. Several new approaches have been developed to make Si detector more radiation hard/tolerant to such ultra-high radiation, including 3D Si detectors, Current-Injected-Diodes (CID) detectors, and Elevated temperature annealing.

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Section: Material/impurity/defect Engineering (Mide)supporting

confidence: 85%

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Li¹

2009

J. Inst.

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“…In [2] we concluded that most of the observed traps (at the working temperature of about 190 ○ K ) in the neutron irradiated spare ladder were VP complexes. The model of radiation damage effects in silicon used in [6] predicts that such complexes should anneal at room temperature with an annealing time of less than one year. If this were true, the traps would have annealed by now.…”

Section: Annealingmentioning

confidence: 99%

Investigation of Radiation Damage in the SLD CCD Vertex Detect

Brau¹

2004

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Early in the operation of the SLD CCD vertex detector (VXD3) at the SLC, radiation damage to the CCDs was observed. It is well known that low energy light particles (electrons and photons) are a few orders of magnitude less effective than heavy particles (neutrons or heavy charged particles) in the generation of radiation damage effects in silicon. The SLD environment was known to be dominated by electrons and photons with a small fraction of neutrons. The estimated radiation damage by these particles can not account for the observed damage. Therefore, this damage is puzzling. A CCD based detector is a leading option for vertex detection at the future linear collider. A full understanding of background models in linear colliders and the associated damage is needed. Earlier results on neutron damage to an SLD CCD were reported at the 1999 IEEE NSS, and these new results complement our old results. In addition to tests on controlled exposures of individual CCDs, we have studied the nature of the traps produced in the SLD vertex detector to assess their originheavy or light particles? I. INTRODUCTION he SLD CCD based vertex detector [1] has achieved outstanding performance. Such a detector is ideally suited for the requirements of vertex detection at the future high energy linear collider (LC). However, CCDs are known to be much more sensitive to radiation damage than other silicon detectors, due to the long charge transfer path within silicon from the point of generation to the output of the device. Additionally, signals generated within a CCD are about 20 times smaller than in a microstrip detector since the sensitive thickness of the CCD is so much thinner. These factors lead to an estimation of maximum allowable exposure of the CCD to Manuscript received October 29, 2003.

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“…[1][2][3][4][5][6] They are all based on the model of impurity-defect interactions suggested in Ref. 7 An essential part of this model are interstitial carbon ͑C i ͒ reactions.…”

Section: Introductionmentioning

confidence: 99%

Reactions of interstitial carbon with impurities in silicon particle detectors

Макаренко

Moll

Korshunov

et al. 2007

Journal of Applied Physics

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We present deep level transient spectroscopy (DLTS) data measured on very high resistivity n-type float-zone silicon detectors after irradiation with 6MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inhomogeneous depth distribution of oxygen and carbon impurities in the devices. We compare our results with data published in previous works and point out some possible misinterpretation of DLTS data due to detector processing induced inhomogeneous distribution of impurities. Finally, we present a method to determine the absolute concentration of the oxygen and carbon impurities as functions of depth in devices by carefully analyzing the carbon interstitital annealing kinetics.

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Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors

Cited by 12 publications

References 16 publications

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Investigation of Radiation Damage in the SLD CCD Vertex Detect

Reactions of interstitial carbon with impurities in silicon particle detectors

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