Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

Danneville, F.; Happy, H.; Dambrine, G.; Belquin, J.-M.; Cappy, A.

doi:10.1109/16.285031

Cited by 51 publications

(24 citation statements)

References 15 publications

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“…In Figure 3, the intrinsic hybrid noise matrix as a function of drain current is simulated for a 0.5-m gate length conventional HEMT structure, but the conclusions may be extrapolated to any FET structure. The bias behaviour of matrix elements is exactly that predicted in previously reported experimental results [4], namely: (i) a linear dependence of drain spectral density (C H22 ) with drain current is observed; (ii) the real part of the correlation coefficient Re( H ) at high drain currents is important [7]; (iii) the imaginary part of the correlation coefficient Im( H ) is nearly zero and can be neglected. …”

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confidence: 69%

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Bias‐dependence of FET intrinsic noise sources, determined with a quasi‐2D model

Lázaro

Maya

Pradell

2003

Micro & Optical Tech Letters

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2,895,620 for 258 spectral points, whereas the hybrid method complexity is 64,512 for 1024 sampling points. The real test on a PC takes about five minutes to perform the third-order nonlinear simulation for the pure frequency-domain approach. The hybrid method only takes about six seconds to complete the same work. CONCLUSIONIn this paper, a hybrid method for Volterra analysis to simulate the weakly nonlinear characteristics of MESFET amplifiers for digital wireless communications systems has been proposed. The major modification is the time-domain equivalent baseband representation for the modulation signal, while the nonlinear calculations are still performed in the frequency-domain via Volterra expansions. Theoretical derivation indicates that complexity reduction can be achieved by using this hybrid approach. Numerical simulations showed the good agreement between the new and traditional approaches for the spectrum, ACPR, and EVM of the MESFET output signals with a large improvement in computation efficiency. The proposed method has potential applications for both circuitand system-level simulations in digital wireless communications. To theoretically investigate the behaviour of noise sources in their hybrid configuration, physical quasi-2D (Q-2D) simulators, such as those proposed in [5,6], provide a cost-effective solution. While a Q-2D analysis has already been applied in [7] to the study of Pospieszalski's model, no theoretical studies on the bias dependence of the hybrid-model noise sources (including correlation), are available in the literature, to the authors' knowledge. BIAS-DEPENDENCE OF FET INTRINSIC NOISE SOURCES, DETERMINED WITH A QUASI-2D MODELThe purpose of this paper is to theoretically obtain the correlated hybrid noise sources and their bias dependence in arbitrary MESFET and HEMT devices, by using a new Q-2D model. In contrast to previous works, the Q-2D simulator presented here is based upon Thornber's current equation. This equation was suggested in [8] to include nonstationary effects (overshoot effect) due to the electric-field space gradient in short-gate devices (submicrometer FETs), but had not been applied to Q-2D models. This approach is a simpler, yet more accurate, alternative to the simultaneous solution of momentum and energy-conserving nonlinear equations proposed in [5,6]. Local equivalent noise sources in the active channel are introduced in order to derive the device's intrinsic noise sources by using a nodal matrix method. Experimental verification up to 26 GHz is presented. PHYSICAL, Q-2D BASED FET NOISE MODELThe proposed Q-2D model for HEMTs is performed in two steps. The first step consists of charge-control and electron transport analysis to compute the DC-characteristics. The second step is the DC-model extension to analyse the device's noise parameters. Charge-control analysis is performed by solving Poisson's and The electron transport analysis is accomplished by using Thornber's 1D generalised current equation. According to [8], the electron velocity can be exp...

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supporting

confidence: 69%

“…While a Q-2D analysis has already been applied in [7] to the study of Pospieszalski's model, no theoretical studies on the bias dependence of the hybrid-model noise sources (including correlation), are available in the literature, to the authors' knowledge.…”

Section: Introductionmentioning

confidence: 99%

Bias‐dependence of FET intrinsic noise sources, determined with a quasi‐2D model

Lázaro

Maya

Pradell

2003

Micro & Optical Tech Letters

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“…Nevertheless, the results of the hypothesis was inconsistent with the experimental noise data previously reported [5], [6] for scaled devices. In general, recent published results on a conventional bulk MOSFET also shared similar conclusion with the work of Danneville et al [7] in III-V field-effect transistors (FETs), namely, the noise sources in the device channel mostly originated from the source side. Considering a device with 100-nm gate length under source-drain bias voltage of 1 V, the average field across the channel far exceeds the saturation field in silicon.…”

Section: Introductionsupporting

confidence: 59%

Drifting-Dipole Noise (DDN) Model of MOSFETs for Microwave Circuit Design

Nguyen

Feng

2010

IEEE Trans. Microwave Theory Techn.

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Physic-based formulations for the high-frequency noise characteristics of nanometer MOSFETs working at saturation are developed. In the derivation, field-dependent mobility, as well as carrier heating effect in the gradual channel approximation region, is taken into account. In addition, diffusion noise due to velocity saturation carriers in the high electric field region is calculated using Statz's drifting dipole theory. Excellent agreement between the proposed model and experimental noise data for 120-nm MOSFET technology was obtained over device sizes, biases, and frequencies up to 26 GHz. The analytical noise model can be incorporated into any compact model to enable first-pass silicon design of microwave circuit.

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“…Dannville et al 6 analyzed the noise characteristics of the MESFET using small signal distributed equivalent circuit. Since the noise source is assumed to be uniform along the channel, the accuracy is questionable at low drain Copyright: American Scientific Publishers current.…”

Section: Introductionmentioning

confidence: 99%

3D Numerical Modeling and Extraction of Noise Parameters of Uniformly Doped Metal-Semiconductor Field Effect Transistor Photodetector

Balasubadra¹,

Rajamani²,

Sankaranarayanan³

2009

Jnl of Comp & Theo Nano

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A new numerical noise model for uniformly doped GaAs MESFET photodetector has been proposed, which is compatible with small signal equivalent circuit and large signal current voltage characteristics. A model has been developed for computation of different noises such as shot noise, thermal noise and diffusion noise present in GaAs metal-semiconductor field effect transistor (MES-FET) in the nano meter region. The potential profile, electric field, mobility and from that the current voltage characteristics have also been calculated by solving the Poisson's Equation numerically. The different noise components and also their correlation components both at the gate end and the drain end have been computed for the two port small signal noise equivalent circuit of the GaAs MESFET photodetector to study the overall noise performance. Signal-to-noise ratio (SNR) and Bit error rate (BER) and the noise equivalent power (NEP) have also been calculated, showing a good agreement with the existing results. Our model is simple and physical enough for device design and circuit simulation especially for OEIC applications. The operating frequency can be adjusted suitably to make the noise behavior of the MESFET independent of the value of the incident optical power.

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Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

Cited by 51 publications

References 15 publications

Bias‐dependence of FET intrinsic noise sources, determined with a quasi‐2D model

Bias‐dependence of FET intrinsic noise sources, determined with a quasi‐2D model

Drifting-Dipole Noise (DDN) Model of MOSFETs for Microwave Circuit Design

3D Numerical Modeling and Extraction of Noise Parameters of Uniformly Doped Metal-Semiconductor Field Effect Transistor Photodetector

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