Microscopic origin of the anomalous Hall effect in noncollinear kagome magnets

Transverse Transport in Two-Dimensional Relativistic Systems with Non-Trivial Spin Textures

“…: (i) Its magnitude and angular form can be engineered by tuning the electronic band structure. (ii) It can give rise to substantial Hall responses in compensated magnets, which we conjecture is the reason for the substantial Hall response observed in the kagome magnets Mn 3 Sn and Mn 3 Ge [66,67], where the NHE can be easily disentangled from the THE since non-coplanar spins are located in the atomic plane. (iii) It can resolve the nature of topological spin-textures as our comparison to the THE showed.…”

Noncollinear ferrimagnetism and anomalous Hall effects in Mn4N thin films

“…We now turn to the anomalous Hall effect to highlight the role of noncollinearity. Theoretical studies of Hall effects due to noncollinear antiferromagnetism have been reported for Mn 3 ZN with several nonmagnetic elements Z [5,28]. For a triangular ferrimagnet, reversal of the applied magnetic field simultaneously flips the out-of-plane net magnetization and the in-plane spin structure.…”

“…However, we know little about the Hall conductivity of noncollinear ferrimagnets, although they are expected to combine features of both collinear ferrimagnets and noncollinear antiferromagnets as shown in Fig. 1(d) [3,5]. It is important to unravel the transport mechanism in order to design spintronic devices that make best use of these versatile noncollinear ferrimagnetic materials [6][7][8][9].…”

Anisotropic magnetic interactions in hexagonal AB-stacked kagome lattice structures: Applications to $\mathrm{Mn}_3\mathrm{X}$ ($\mathrm{X}$ = $\mathrm{Ge}$, $\mathrm{Sn}$, $\mathrm{Ga}$) compounds

“…Unlike collinear antiferromagnets, non-collinear antiferromagnetic structures have been shown to induce AHE even without spin-orbit coupling. However, little is known about the types of antiferromagnetic order that can yield AHE and the majority of the existing theories have been based on the previous studies of Mn 3 Sn and Mn 3 Ge [10,17,18]. From a technological standpoint these emergent transport properties of Mn 3 X compounds are very attractive in the development of antiferromagnetic spintronics and memory devices since the size of these materials is not limited by the demagnetizing fields as in the case of ferromagnets.…”