Microscopic properties of H2 diluted HWCVD deposited a-SiC:H film

Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution

“…10 Generally, in order to deposit SiC films by this technique, different gas sources are employed such as monomethylsilane (MMS)/H 2 , [11][12][13][14][15] SiH 4 /CH 4 /H 2 , [16][17][18] SiH 4 /C 2 H 2 /H 2 9 and SiH 4 /C 2 H 6 /H 2 . 19 Amorphous SiC films are usually reported to be formed when C 2 H 2 or C 2 H 6 is used as the carbon sources, 19,20 while formation of crystalline SiC thin films has been reported mostly from the use of CH 4 and SiH 4 gas mixture 21 or MMS gas sources with high dilution in hydrogen. 12 However, from the viewpoint of cost reduction and practical application, employing SiH 4 /CH 4 gas mixture without H 2 could be advantageous because hydrogen dilution tends to reduce the deposition rate of the films.…”

Hydrogen Dilution-Induced Chemical State Modification in Silicon Nanowires

“…Hydrogen dilution is believed to be an important process parameter in various CVD processes. − Because the exact role of hydrogen in synthesizing SiNWs is an open question, this study was initiated to answer this question. Some previous work has attempted to explain the effect of hydrogen in syntheses of carbon fibers and carbon nanotubes. − First, the role of hydrogen is suggested to limit or alleviate the poisoning of the metal catalysts by elemental carbon. − Second, in the thin film deposition processes of silicon (microcrystalline, nanocrystalline) and silicon- or carbon-based alloys SiC:H, − SiN:H, SiOC:H, CN:H, etc. ), hydrogen plays a role in compromising between amorphous and crystalline fraction.…”

“…), hydrogen plays a role in compromising between amorphous and crystalline fraction. Many research groups − reported that a device-quality polycrystalline silicon film can be achieved by large hydrogen dilution. Third, hydrogen dilution retards the deposition rate by acting as a reducing agent but improves transport properties of silicon. , Fourth, hydrogen passivation reduces defect densities .…”

“…Hydrogen dilution is believed to be an important process parameter in various CVD processes. [14][15][16][17][18][19][20][21][22][23][24] Because the exact role of hydrogen in synthesizing SiNWs is an open question, this study was initiated to answer this question. Some previous work has attempted to explain the effect of hydrogen in syntheses of carbon fibers and carbon nanotubes.…”

The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC:H films

“…The term hydrogenated amorphous silicon carbon (a-SiC:H) sounds ambiguous, in the sense that it encompasses a wide range of application from photovoltaic cells, low k diffusion barrier layer in back end of line (BEOL) in VLSI, optoelectronic device and biocompatible material for bio-implant materials [1][2][3][4]. The atomic-scale structures and structural stability of a-SiC:H is not well understood because of the inherent bistability at sp 3 (diamond-type) and sp 2 (graphitetype) coordination in carbon.…”