2021
DOI: 10.1038/s43246-021-00174-7
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Microscopic relaxation channels in materials for superconducting qubits

Abstract: Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we combine measurements of transmon qubit relaxation times (T1) with spectroscopy and microscopy of the polycrystalline niobium films used in qubit fabrication. By comparing films deposited using three different techniques, we reveal correlations between T1 and intrinsic film properti… Show more

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Cited by 58 publications
(51 citation statements)
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“…Finally, the films resulted in a superconducting transition temperature T c = 9.20 ± 0.06 K and a residual resistivity ratio (RRR) of 4.8 (Fig. 1(e)) exhibiting the high quality of the evaporated Nb, in accord with recent results with sputtered Nb 36 .…”
supporting
confidence: 88%
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“…Finally, the films resulted in a superconducting transition temperature T c = 9.20 ± 0.06 K and a residual resistivity ratio (RRR) of 4.8 (Fig. 1(e)) exhibiting the high quality of the evaporated Nb, in accord with recent results with sputtered Nb 36 .…”
supporting
confidence: 88%
“…Due to its various crystalline phases and physical properties, Nb 2 O 5 has been considered as one of the main sources of defects present on the surface of Nb 41 . NbO 2 also contributes to the loss due to oxygen vacancies 36 , which has the lowest participation in the deposited films reported here.…”
mentioning
confidence: 84%
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“…Based on previous findings, it is likely that this oxygen is mainly localized at grain boundaries in the Nb film. [40] Following the lithographic patterning of the qubit architecture, TOF-SIMS depth profiles are taken from the Nb capacitance pads deposited with HiPIMS to once again probe the distribution of oxides and hydrocarbons in the film. In this case, we find that the concentration of hydrogen, carbon, and oxygen increase uniformly.…”
Section: Methodsmentioning
confidence: 99%
“…In theory, this method can be adapted to make planar superconducting devices, however the effect of high temperature is not yet well understood. Treatment at high temperature can change the stress and grain size of the deposited metal and allow Nb to diffuse into a substitutional site inside the Si substrate, which all could potentially affect microwave loss [23][24][25] . Baking at high temperature can also introduce dislocation and vacancy defects in the Si substrate, whose effects on microwave loss have not yet been systematically explored.…”
mentioning
confidence: 99%