Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.

doi:10.1116/1.4903941

Cited by 55 publications

(102 citation statements)

References 15 publications

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“…20,28 During thermal ALD the precursor pulse time is the main limiting factor for high AR coverage. 29 Hence, the perfect coverage of TiO 2 during thermal ALD ensures that the chosen TDMA-Ti pulse time of 0.3 s is sufficiently long and cannot be a limiting factor during PEALD either.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Schindler¹,

Logar

Provine³

et al. 2015

Langmuir

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Plasma-enhanced atomic layer deposition (PEALD) provides multiple benefits compared to thermal ALD including lower possible process temperature and a wider palette of possible materials. However, coverage of high aspect ratio (AR) structures is limited due to the recombination rates of the radical plasma species. We study the limits of conformality in 1:30 AR structures for TiO2 based on tetrakis(dimethylamido)titanium (TDMA-Ti) and O2 plasma through variation in plasma exposure and substrate temperature. Extending plasma exposure duration and decreasing substrate temperature within the ALD window both serve to improve the conformality of the deposited film, with coverage >95% achievable. Additionally, the changes in morphology of the TiO2 were examined with crystallites of anatase and brookite found.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Schindler¹,

Logar

Provine³

et al. 2015

Langmuir

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show abstract

“…Atomic layer deposition (ALD) is a thin film growth method that allows the preparation of uniform inorganic material layers on arbitrarily complex three-dimensional structures. The three-dimensional uniformity, also termed "conformality," is a consequence of the systematic use of repeated, selfterminating (saturating, irreversible), separated gas-solid reactions of at least two compatible compounds [1][2][3][4][5][6]. While the principles of ALD were formulated already in the 1960s and 1970s, independently twice [7][8][9][10][11][12][13][14], it was in the 1990s that ALD was promoted as a tool for nanotechnology [15] and during the 2000s that ALD has enabled the continuation of Moore's law of transistor miniaturisation [16].…”

Section: Introductionmentioning

confidence: 99%

Nickel Supported on Mesoporous Zirconium Oxide by Atomic Layer Deposition: Initial Fixed-Bed Reactor Study

et al. 2019

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Atomic layer deposition (ALD) is gaining attention as a catalyst preparation method able to produce metal (oxide, sulphide, etc.) nanoparticles of uniform size down to single atoms. This work reports our initial experiments to support nickel on mesoporous zirconia. Nickel (2,2,6,6-tetramethyl-3,5-heptanedionate) 2 [Ni(thd) 2 ] was reacted in a fixed-bed ALD reactor with zirconia, characterised with BET surface area of 72 m 2 /g and mean pore size of 14 nm. According to X-ray fluorescence measurements, the average nickel loading on the top part of the support bed was on the order of 1 wt%, corresponding to circa one nickel atom per square nanometre. Cross-sectional scanning electron microscopy combined with energy-dispersive spectroscopy confirmed that in the top part of the fixed support bed, nickel was distributed throughout the zirconia particles. X-ray photoelectron spectroscopy indicated the nickel oxidation state to be two. Organic thd ligands remained complete on the surface after the Ni(thd) 2 reaction with zirconia, as followed with diffuse reflectance infrared Fourier transform spectroscopy. The ligands could be fully removed by oxidation at 400 °C. These initial results indicate that nickel catalysts on zirconia can likely be made by ALD. Before catalytic testing, in addition to increasing the nickel loading by repeated ALD cycles, optimization of the process parameters is required to ensure uniform distribution of nickel throughout the support bed and within the zirconia particles.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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“…1,2,3,4,5 ALD thin films can be grown with sub-monolayer thicknesses, since in each growth cycle self-limiting surface reactions take place. 3,4,6 This unique feature enables precise thickness control and high conformality 7,8 of the grown film by simply controlling the number of growth cycles.…”

Section: Introductionmentioning

confidence: 99%

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Ylivaara¹,

Kilpi²,

Liu

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110–300 °C), film thickness (20–300 nm), bilayer thickness (0.1–100 nm), and TiO2 content (0%–100%). Al2O3 was grown from Me3Al and H2O, and TiO2 from TiCl4 and H2O. According to wafer curvature measurements, Al2O3/TiO2 nanolaminates were under tensile stress; bilayer thickness and growth temperature were the major parameters affecting the stress; the residual stress decreased with increasing bilayer thickness and ALD temperature. Hardness increased with increasing ALD temperature and decreased with increasing TiO2 fraction. Contact modulus remained approximately stable. The adhesion of the nanolaminate film was good on silicon.

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Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Abstract: Articles you may be interested inHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

Cited by 55 publications

References 15 publications

Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Nickel Supported on Mesoporous Zirconium Oxide by Atomic Layer Deposition: Initial Fixed-Bed Reactor Study

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

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Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Abstract: Articles you may be interested inHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

Cited by 55 publications

References 15 publications

Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Nickel Supported on Mesoporous Zirconium Oxide by Atomic Layer Deposition: Initial Fixed-Bed Reactor Study

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

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Product

Resources

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Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition