Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers

Kühn, Eckhard; Koch, S. W.; Thränhardt, A.; Hader, J.; Moloney, Jerome V.

doi:10.1063/1.3294628

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…With 940 nm pumping only (black line), we achieve a maximum output power of 2.11W. This output power level is comparable to previous experimental and theoretical reports [9,15,23]. At the end of the power curve, the slope of the curve tends to remain constant.…”

Section: Resultssupporting

confidence: 84%

“…For in-well pumping, the shorter wavelength of the pump light, the larger photon energy, and the greater the intrinsic absorption coefficient of QW to the pump light. However, large pump photon energy will also lead to large quantum defects, an obvious thermal effect, and a weaker confinement effect of QW on excited carriers [9,23]. Due to the pump photon being absorbed in the QW and creating an electron-hole pair, the conduction band and valence band have the same number of electrons and holes.…”

Section: Methodsmentioning

confidence: 99%

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In-Well and Barrier Coupling Pump of Semiconductor Disk Laser

et al. 2022

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We report an in-well and barrier coupling pump scheme of semiconductor disk laser (SDL). An in-well-absorbed (940 nm) and a barrier-absorbed (808 nm) pump source were used to measure laser output characteristics. The output power of the coupling pump can be significantly improved compared to the inwell pump only scheme under similar thermal load conditions. The power scaling of the coupling pump SDL is caused by the interaction dynamics of the photoexcited carrier between quantum-well and barrier. The results are discussed with a rate equation model that considers the injected into the quantum-well carrier and the barrier carrier in the active region.

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Section: Resultssupporting

confidence: 84%

Section: Methodsmentioning

confidence: 99%