Microscopic structure of GaSb(001) c(2×6) surfaces prepared by Sb decapping of MBE-grown samples

Resch‐Esser, U.; Esser, N.; Brar, B.; Kroemer, H.

doi:10.1103/physrevb.55.15401

Cited by 26 publications

(26 citation statements)

References 10 publications

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“…The reconstruction has a similar appearance to that observed on InSb, 19 AlSb, 20 and GaSb. 21,22 We believe the atomicscale structure is similar to that proposed for GaSb(001)-c(2ϫ6), 22,23 which consists of a full 1 ML plane of Sb atoms terminated by 2 3 ML of Sb in dimer rows ͓see Fig. 4͑d͔͒.…”

Section: ϫ2mentioning

confidence: 66%

“…Sb dimer rows running along the ͓110͔ direction are seen, as are rotated Sb dimers between the rows in the second layer, consistent with the model proposed for III-Sb(001)Ϫc(2ϫ6) surfaces. 22,23 The final surface studied was 22 ML of InAs deposited on top of the interrupt-terminated AlSb film. To make this InAs film representative of the next interface in a double-AlSbbarrier structure, its growth was terminated by a 30 s interrupt under Sb 2 .…”

Section: ϫ2mentioning

confidence: 99%

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Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

Nosho¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have used in situ plan-view scanning tunneling microscopy to study the surfaces and interfaces within an InAs/AlSb/InAs resonant tunneling diodelike structure grown by molecular beam epitaxy. The nanometer and atomic-scale morphologies of the surfaces have been characterized following a number of different growth procedures. When InAs(001)-(2ϫ4) is exposed to Sb 2 a bilayer surface is produced, with 1 monolayer ͑ML͒ deep ͑3 Å͒ vacancy islands covering approximately 25% of the surface. Both layers exhibit a (1ϫ3)-like reconstruction characteristic of an InSb-like surface terminated with Ͼ1 ML Sb, indicating that there is a significant amount of Sb on the surface. When 5 ML of AlSb is deposited on an Sb-terminated InAs surface, the number of layers observed on each terrace increases to three. Growth of an additional 22 ML of InAs onto the AlSb layer, followed by a 30 s interrupt under Sb 2 , further increases the number of surface layers observed. The root-mean-square roughness is found to increase at each subsequent interface; however, on all the surfaces the roughness is р2 Å. The surface roughness is attributed to a combination of factors, including reconstruction-related stoichiometry differences, kinetically limited diffusion during growth, and lattice-mismatch strain. Possible methods to reduce the roughness are discussed.

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Section: ϫ2mentioning

confidence: 66%

Section: ϫ2mentioning

confidence: 99%

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

Nosho¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1,2 However, there are indications that the detailed structures of the ͑1 ϫ 3͒ and c͑2 ϫ 6͒ surfaces have remained unresolved. [3][4][5][6] Indeed, structures, shown in Figs. 2͑a͒-2͑e͒, have been recently proposed for them on the basis of high-resolution STM findings and theoretical calculations.…”

Section: Introductionmentioning

confidence: 99%

Bismuth-stabilizedc(2×6)reconstruction on a InSb(100) substrate: Violation of the electron counting model

et al. 2010

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By means of scanning tunneling microscopy/spectroscopy ͑STM/STS͒, photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth ͑Bi͒ adsorbate-stabilized InSb͑100͒ substrate surface which shows a c͑2 ϫ 6͒ low-energy electron diffraction pattern ͓thus labeled Bi/ InSb͑100͒c͑2 ϫ 6͒ surface͔ and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The firstprinciples phase diagram of the Bi/InSb͑100͒ surface demonstrates the presence of the Bi-stabilized metallic c͑2 ϫ 6͒ reconstruction and semiconducting ͑4 ϫ 3͒ reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c͑2 ϫ 6͒ phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on ͑i͒ first-principles phase diagram, ͑ii͒ STS results, and ͑iii͒ comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/ InSb͑100͒c͑2 ϫ 6͒ surface includes metallic areas with the stable c͑2 ϫ 6͒ atomic structure and semiconducting areas with the stable ͑4 ϫ 3͒ atomic structure.

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“…During device growth both GaSb and AlSb usually exhibit a ͑1 3 3͒-like reflection high-energy electron diffraction (RHEED) pattern, with the GaSb RHEED further delineated into distinct c͑2 3 6͒ and ͑1 3 3͒ (higher temperature/lower Sb flux) regimes [12,13]. Simple Sb-dimer row models for these reconstructions have been proposed [13,14], but scanning tunneling microscopy (STM) studies of the III-Sb(001) surfaces by a number of different research groups show that the actual ͑1 3 3͒-like structures must be more complex [9,[14][15][16].In this Letter, we describe the atomic-scale structures that occur for a range of Sb-rich growth conditions on AlSb and GaSb(001) as definitively determined by a combined experimental and theoretical study. We find that there are two distinct ͑4 3 3͒ reconstructions relevant for typical device growth, and that they both incorporate novel III-Sb heterodimers that appear to play an important role in island nucleation and growth.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

et al. 2000

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We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally ͑1 3 3͒, we find that there are actually three distinct, stable ͑4 3 3͒ surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth. PACS numbers: 68.35.Bs, 61.16.Ch, 73.61.Ey, 81.15.Hi The surface reconstruction on a semiconducting material is the starting point for understanding the mechanisms of growth from the vapor. The steric and energetic landscape of the surface reconstruction determines the kinetic factors for adsorption, diffusion, and desorption, and provides the template for island nucleation [1]. These factors are critical to our understanding of growth and the formation of interfaces between materials, particularly for the case of III-V semiconductor quantum heterostructures, which are key components in a wide range of optical and high frequency electronic devices under development. Many of the most promising applications require extremely thin layers, so that even submonolayer variations in film thickness and interfacial roughness can dramatically affect the ultimate device performance [2,3]. To achieve the level of morphological control needed to reproducibly fabricate optimized III-V devices, a detailed understanding of the relevant surface reconstructions and the mechanisms by which epitaxy proceeds is essential.The structure of III-As and III-P (001) surfaces under typical device growth conditions (V͞III flux . 1) has been generally established [4,5]. For the much-studied case of GaAs, the extensive experimental and theoretical knowledge accumulated about the surface structure has led to significant progress in understanding the atomistic mechanisms of growth during molecular beam epitaxy (MBE) [6,7]. In contrast, the III-Sb device surfaces are poorly understood, despite their demonstrated potential for a variety of advanced electronic and optoelectronic applications [8]. Although the surface structures have been determined for atypical, extreme Sb-rich conditions-InSb and AlSb have the c͑4 3 4͒ structure common to the arsenides, and GaSb reconstructs into unusual, metallic ͑n 3 5͒ structures [9,10]-even after more than 20 years of study [11], the atomic-scale structures under more typical growth conditions have yet to be resolved. During device growth both GaSb and AlSb usually exhibit a ͑1 3 3͒-like reflection high-energy electron diffraction (RHEED) pattern, with the GaSb RHEED further delineated into distinct c͑2 3 6͒ and ͑1 3 3͒ (higher temperature/lower Sb flux) regimes [12,13]. Simple Sb-dimer row models for these reconstructions have been proposed [13,14], but scanning tunneling microscopy (STM) studies of the III-Sb(001) surfaces...

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Microscopic structure of GaSb(001) c(2×6) surfaces prepared by Sb decapping of MBE-grown samples

Cited by 26 publications

References 10 publications

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

Bismuth-stabilizedc(2×6)reconstruction on a InSb(100) substrate: Violation of the electron counting model

Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

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