Microsized structures assisted nanostructure formation on ZnSe wafer by femtosecond laser irradiation

Wang, Shutong; Feng, Guoying; Zhou, Shouhuan

doi:10.1063/1.4904998

Cited by 13 publications

(7 citation statements)

References 16 publications

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“…As known, the ablation 3 Journal of Nanomaterials threshold for ZnSe is about 0.7 J/cm 2 [22]. The LIPSS parameters obtained in our experiments correlate with the data of the previous studies [14,15,17,23].…”

Section: Peculiarities Of Lipss Formation On the Znse Surfacesupporting

confidence: 88%

“…Based on the Drude model, modified femtosecond laser-excited refractive index n * for ZnSe is lower than that for untreated material. Thus, Wang et al [23] obtained for the laser-treated ZnSe the HSFL period of 200 ± 10 nm. The values of HSFL periods obtained in our [32][33][34][35].…”

Section: Peculiarities Of Lipss Formation On the Znse Surfacementioning

confidence: 99%

“…In our case, we observe slight dependence of HSFL on pulse energy density. The authors [14,23,29] point to the transient changes in material properties under ultrashort laser irradiation. Therefore, for laser-induced ZnSe, the complex refractive index n * (λ) is considered as a function of the carrier density in the conduction band.…”

Section: Peculiarities Of Lipss Formation On the Znse Surfacementioning

confidence: 99%

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Luminescence of Femtosecond Laser-Processed ZnSe Crystal

Dmitruk

Berezovska

Degoda

et al. 2021

Journal of Nanomaterials

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The ZnSe single crystal treatment in air environment with linearly polarized Ti/sapphire femtosecond (fs)laser pulses of the energy density of around 0.04-0.05 J/cm2 with central wavelength of 800 nm and the pulse duration of 140 fs at a repetition rate of 1 kHz generates the laser-induced periodic surface structures (LIPSSs). The setup with a cylindrical quartz lens at normal incidence allowed processing a relatively large area of the ZnSe sample in one pass of the laser beam. Morphology analysis of LIPSS by scanning electron microscopy (SEM) and image processing reveals the existence of two periods of around 200.0 nm and 630.0 nm simultaneously. All LIPSSs demonstrate the orientation perpendicular to the laser beam polarization. The possible nature of LIPSS formation on ZnSe single crystal is caused by the synergetic influence of the interference mechanism involving surface plasmon polaritons and hydrodynamic effects of surface morphology modification. The fs-laser-induced changes of carrier concentrations in ZnSe specify obtained periods of high spatial frequency LIPSS. The influence of femtosecond laser processing on luminescent properties of ZnSe single crystal has been studied by an analysis of the photoluminescence (PL) and X-ray luminescence (XRL) spectra of laser-treated and untreated areas in the visible region of spectrum at room and low temperatures. The PL spectra and XRL spectra, as well as temperature dependencies of XRL spectra or thermally stimulated luminescence curves, demonstrate a good correlation for untreated and fs-laser-treated ZnSe surfaces. Specific PL bands related to the extended structural defects do not appear for LIPSS at the ZnSe sample under an excitation of 337 nm (3.68 eV). The Relative intensities and position of separate components of observed luminescence bands after ultrashort laser treatment do not change significantly. Thus, the structural perfection of the ZnSe single crystal surface is preserved.

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Section: Peculiarities Of Lipss Formation On the Znse Surfacesupporting

confidence: 88%

Section: Peculiarities Of Lipss Formation On the Znse Surfacementioning

confidence: 99%

Section: Peculiarities Of Lipss Formation On the Znse Surfacementioning

confidence: 99%

See 1 more Smart Citation

Luminescence of Femtosecond Laser-Processed ZnSe Crystal

Dmitruk

Berezovska

Degoda

et al. 2021

Journal of Nanomaterials

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“…The period of the formed structure is typically larger than halfwavelength, λ∕2, with a strong dependence on the angle of incidence [4,5]. However, under femtosecond (fs) laser irradiation, periods slightly smaller than the laser wavelength [therefore, subwavelength structures (SWS)] [3,4], as well as deep-subwavelength structures (DSWS) [6][7][8][9][10][11] with periods considerably smaller than λ∕2, were observed on transparent materials and semiconductors. Up to now, these two types of surface structures have become a universally observed feature in the fs laser multipulse ablation [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Competition between subwavelength and deep-subwavelength structures ablated by ultrashort laser pulses

Wang

Cao

et al. 2017

Optica

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Femtosecond laser-induced periodic subwavelength and deep-subwavelength structures (SWS; DSWS) have attracted attention due to their subdiffraction resolution of surface and inner volume patterning. Understanding of the richness of laser-matter interaction during formation of SWS and DSWS is another quest which can help to find control for nanoscale fabrication. Lack of control over SWS and DSWS formation has impacted their wider use and calls for a deeper insight into the relationship between them. Herein we present a systematic study defining a criterion for imprinting either SWS or DSWS, which is based on a competition and their mutual incompatibility discriminated by the laser fluence and pulse accumulation. Structure evolution of SWS and DSWS is highly dependent on the localized effective laser fluence, which determines the instantaneous optical permittivity by the laser-excited electrons creating an active plasma layer. The proposed universal SWS and DSWS competition mechanism involving the laser-induced plasma wave at the plasma-substrate interface ties together many previous observations and unifies the discussed mechanisms of surface nanoripple formation.

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“…16 Wang et al reported a micro/nanopatterning by fs laser irradiation through a pinhole. 17 Two of the essential challenges of laser induced surface micro/nanostructures are the control of the morphologies of the individual objects and the control of their arrangements.…”

mentioning

confidence: 99%