Microsphere-assisted ultra-small spot spectral reflectometry technique for semiconductor device metrology

Kwon, Soonyang; Kim, Kwangrak; Park, Jangryul; Cho, Yunje; Lee, Myungjun

doi:10.1117/12.2582269

Cited by 2 publications

(3 citation statements)

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“…At the same time, the reduction in the beam waist size is also possible due to the use of the gradient particle materials [99]. These effects can assist in solving problems of optical metrology of super-high resolution [100].…”

Section: Overcoming the Diffraction Limit And Image Quality Improvementmentioning

confidence: 99%

Optical Phenomena in Mesoscale Dielectric Particles

Minin

2021

Photonics

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During the last decade, new unusual physical phenomena have been discovered in studying the optics of dielectric mesoscale particles of an arbitrary three-dimensional shape with the Mie size parameter near 10 (q~10). The paper provides a brief overview of these phenomena from optics to terahertz, plasmonic and acoustic ranges. The different particle configurations (isolated, regular or Janus) are discussed, and the possible applications of such mesoscale structures are briefly reviewed herein in relation to the field enhancement, nanoparticle manipulation and super-resolution imaging. The number of interesting applications indicates the appearance of a new promising scientific direction in optics, terahertz and acoustic ranges, and plasmonics. This paper presents the authors’ approach to these problems.

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Section: Overcoming the Diffraction Limit And Image Quality Improvementmentioning

confidence: 99%

Optical Phenomena in Mesoscale Dielectric Particles

Minin

2021

Photonics

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“…As for OCD metrology, cross-sectional-shape dimensions are estimated by irradiating a light beam with spot size of a few microns or sub-micron onto the target and matching the spectral characteristics of the reflected light with those obtained using a previously learned model. 6 The average dimension within the light-irradiation range can be measured in the order of nanometers by utilizing spectral characteristics; in principle, however, it is difficult to measure local fluctuations with OCD metrology. It is also difficult to determine in advance the variations in cross-sectional shape that actually occur, and obtaining calibration data with sufficient variation is a major challenge facing learning-based methods.…”

Section: Introductionmentioning

confidence: 99%

“…In addition to CD-SEM, optical critical-dimension (OCD) metrology is as an in-line tool for measuring dimensions. As for OCD metrology, cross-sectional-shape dimensions are estimated by irradiating a light beam with spot size of a few microns or sub-micron onto the target and matching the spectral characteristics of the reflected light with those obtained using a previously learned model 6 . The average dimension within the light-irradiation range can be measured in the order of nanometers by utilizing spectral characteristics; in principle, however, it is difficult to measure local fluctuations with OCD metrology.…”

Section: Introductionmentioning

confidence: 99%

Quantification of three-dimensional pattern-shape variation with CD-SEM top-down image

Osaki

Yasui

Tanaka

et al. 2023

J. Micro/Nanopattern. Mats. Metro.

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The shrinkage of circuit patterns for improvement of the semiconductor device performance has reduced the tolerances in production. To fit in the tolerances, technologies for improving the uniformity of three-dimensional (3D) shapes of circuit patterns inter-or intra-wafers has been developed. Then, we developed a method for quantifying variations in 3D shapes by critical-dimension scanning electron microscopy (CD-SEM), which can measure widths of circuit patterns with high sensitivity. Since variations in the SEM-image signal are caused by 3D-shape variations, in the method, multiple feature values representing the signal detect shape variations. To compare the effect of the variation in each feature value on the shape variation, the amount of variation in the feature values was normalized by local variations in a reference image. Evaluation on etched wafers showed that several features exhibited independent variation trends that were larger than the local fluctuation. Cross-sectional verification confirmed that one of the feature values correlated with the width at the middle height that cannot be seen in top-view, and variations of 0.24 nm can be detected. It is expected that adjusting processing conditions based on this variation trend will efficiently improve the uniformity of the 3D shape.

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Microsphere-assisted ultra-small spot spectral reflectometry technique for semiconductor device metrology

Cited by 2 publications

References 0 publications

Optical Phenomena in Mesoscale Dielectric Particles

Optical Phenomena in Mesoscale Dielectric Particles

Quantification of three-dimensional pattern-shape variation with CD-SEM top-down image

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