2024
DOI: 10.36948/ijfmr.2024.v06i02.16012
|View full text |Cite
|
Sign up to set email alerts
|

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

G. Nagaraju -,
N.V. Srihari -,
M. Vani -
et al.

Abstract: This paper investigates the effect of hafnium dioxide (HfO2) thin film as interlayer between the Mo and n-Si semiconductor on the electrical characteristics of the Mo/n-Si Schottky diode (SD). The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results confirmed that HfO2 films were formed on the n-Si semiconductors. The image from SEM and AFM displays that the deposited HfO2 thin film had a uniform appearance good smoothness of the surface. The smooth surfaces of the insulating layer strong… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 37 publications
0
0
0
Order By: Relevance