2016
DOI: 10.1590/1980-5373-mr-2015-0161
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Microstructural and Electrical Features of Yttrium Stabilised Zirconia with ZnO as Sintering Additive

Abstract: Adding ZnO reduces sintering temperature of yttria stabilized zirconia. Adding up to 0.5 wt% of ZnO is possible to densify to 8 mol% yttria stabilized zirconia (TZ8Y) to 95% of relative density at 1300 °C, besides, the electrical conductivity increases about 30% at 800 °C when compared to pure TZ8Y with the same relative density and average grain size. These results show that TZ8Y co-doped with ZnO can be a potential electrolyte to solid oxide fuel cells and electrolyzer cells.

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Cited by 7 publications
(2 citation statements)
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“…The Raman spectrum taken from the reference sample (Figure ) is a good match to YSZ Raman data published elsewhere . Residual stresses in a material will cause a frequency shift in the Raman mode.…”
Section: Discussionsupporting
confidence: 64%
“…The Raman spectrum taken from the reference sample (Figure ) is a good match to YSZ Raman data published elsewhere . Residual stresses in a material will cause a frequency shift in the Raman mode.…”
Section: Discussionsupporting
confidence: 64%
“…High deposition temperature and lower oxygen partial pressure resulted in dense microstructure and less dense at increasing oxygen partial pressure. Dense microstructure thin film has high oxygen ion conductivity while porous thin films have low oxygen ion conductivity but have high protonic conductivity [25,31,32]. For scandium and yttrium co-doped zirconia or ScYSZ thin films, very limited information or none so far has been reported on the effects of PLD deposition parameters on the properties of ScYSZ solid electrolyte thin films.…”
Section: Introductionmentioning
confidence: 99%