Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN

Kim, Jong Kyu; Je, Jung Ho; Lee, Jae Won; Park, Young Jo; Kim, Taeil; Jung, In-Ok; Lee, Byung‐Teak; Lee, Jong‐Lam

doi:10.1007/s11664-001-0110-3

Cited by 14 publications

(6 citation statements)

References 12 publications

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“…The Ga solubility in Au is as high as 13 atom % at 415°C in the phase diagram of Ga-Au. 20 The amount of Ga atoms dissolved into the Au-Pd solid solution is lower than that forming the intermetallic Pd gallides, leading to the production of lower V Ga concentration below the Pd/Au contact. Thus the contact resistivity of the Pd/Au contact is higher than that of the Pd/Ni contact at 500°C, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Microstructural and Electrical Investigation of Low Resistance and Thermally Stable Pd/Ni Contact on p-Type GaN

Jang

Cho

Lee

et al. 2003

J. Electrochem. Soc.

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The microstructural reaction of Pd/Ni contact to p-type GaN has been investigated using transmission electron microscopy, and the results were used to interpret the electrical properties of the ohmic contact. When the contact was annealed at 500°C, the contact resistivity decreased to 5.7 ϫ 10 Ϫ5 ⍀ cm 2 and the layer structure changed to NiO/Ga 2 Pd 5 /Ga 5 Pd/GaN. The NiO layer produced at the surface acted as a diffusion barrier for the outdiffusion of Pd atoms to the surface. This promoted the formation of such Pd gallides due to the reaction of Pd layer with GaN substrate. Subsequently, Ga vacancies, acting as effective acceptors for electrons, were produced below the contact. The NiO layer could also suppress the outdiffusion of N atoms released from the decomposed GaN, leading to the interfacial region to be a N-rich condition. Therefore, the good thermal stability as well as low contact resistivity could be simultaneously realized with the Pd/Ni contact.

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Section: Resultsmentioning

confidence: 99%

Microstructural and Electrical Investigation of Low Resistance and Thermally Stable Pd/Ni Contact on p-Type GaN

Jang

Cho

Lee

et al. 2003

J. Electrochem. Soc.

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“…On the other hand, Koide et al 17 reported that annealing the contact in oxygen ambient reduces the contact resistance because of dissociation of residual Mg-H complexes and corresponding increase in Mg activation. Furthermore, the microstructural changes occurring during annealing of Ni/Au contacts are also reported by Kim et al 19 A summary of various reports on contact resistance of Ni/Au on p-GaN is provided in Table I. Clearly, a wide range of values for specific contact resistance are reported, even in cases where the process to fabricate the contact appears similar.…”

Section: Ohmic Contact In P-ganmentioning

confidence: 52%

Measurement of Small Specific Contact Resistance of Metals with Resistive Semiconductors

Krishna

2007

Journal of Elec Materi

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The method to measure specific contact resistance of metals with resistive semiconductors has difficulties associated with it. These difficulties are discussed in relation to contacts on gallium nitride (GaN). The specific contact resistance of a Ni/Au contact on p-GaN after oxygen anneal was determined to be on the order of 10 )1 Wcm 2 , which is significantly higher than the best value (10 )6 Wcm 2 ) reported in the literature. However, the basic measurement of current-voltage (I-V) characteristics of the contact in determining the specific contact resistance is not significantly different. The analysis shows that in materials such as p-GaN, which is highly resistive, a low specific contact resistance may be difficult to measure by standard transmission line methods below approximately 10 )2 -10 )3 Wcm 2 in p-GaN.

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“…Nickel nitrides compounds have been the subject of scientific investigation due to their applications such as producing Ni containing stainless steels or manufacturing electronic devices [1][2][3]. Among these Nickel nitrides compounds, α-Ni 4 N is a typical compound.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study of Structural and Thermal of <i>α</i>-Ni<sub>4</sub>N

Hou

Zhu

Liang

et al. 2015

MSF

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This paper reports a study on the structure and elastic properties of cubic α-Ni4N by performing first principles calculations within Generalized gradient approximation (GGA). The calculated lattice constant and elastic constants are in good agreement with the available experimental or theoretical value. The thermal properties including the bulk modulus, thermal expansion, Grüneisen parameter and Debye temperature have also been calculated within the quasi-harmonic Debye method.

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Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN

Cited by 14 publications

References 12 publications

Microstructural and Electrical Investigation of Low Resistance and Thermally Stable Pd/Ni Contact on p-Type GaN

Microstructural and Electrical Investigation of Low Resistance and Thermally Stable Pd/Ni Contact on p-Type GaN

Measurement of Small Specific Contact Resistance of Metals with Resistive Semiconductors

First-Principles Study of Structural and Thermal of <i>α</i>-Ni<sub>4</sub>N

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