Temperature‐ and magnetic‐field‐dependent conduction properties of electron‐doped Ca0.85Pr0.15MnO3 (CPMO) and Ca0.85La0.15MnO3 (CLMO) manganites have been reported. The resistivity for both samples show robust insulating behavior with an inflection near the corresponding charge‐ordering temperatures (TCO). The small‐polaron hopping conduction mechanism has been observed in the higher‐temperature region (room temperature to 116 K for CPMO and to 114 K for CLMO) in the absence of a magnetic field. The temperature region changes in the presence of magnetic field of 15 T. However, the resistivity follows a variable‐range hopping (VRH) mechanism at lower temperature regime in both samples. Magnetic‐field‐dependent resistivity have been explained in terms of a phenomenological model taking into account spin‐polarized tunneling at grain boundaries in both polycrystalline materials. Scaled field‐dependent MR data at different temperatures fall on a single curve, indicating the existence of a general formalism of MR in a polycrystalline sample and also suggests the temperature‐independent behavior of the reduced magnetoresistance.