Microstructural Characteristics of InGaZnO Thin Film Using an Electrical Current Method

Abstract

This research studied the microstructural characteristics and electronic properties of IGZO1114 films (atomic ratio In : Ga : Zn : O = 1 : 1 : 1 : 4) with different annealing conditions. The solid-state electrical current method was used in the IGZO/In films (In layer was a channel) and the interface effect on the electrical current mechanism was discussed. The experimental results show the effect of the annealing temperature was larger than that of the deposition oxygen flow rate for the film resistances. IGZO film which was annealed at 575 K was able to stabilize the composition of the matrix. The electrical current experiment at room temperature confirmed that the diffusion of the IGZO/In film occurred through an electric current induced crystallization (EIC). The In layer not only assisted the recrystallization behavior of the IGZO film, but also improved the electrical resistance.