Microstructural Characterization for Ge Clusters Embedded in a-SiN _y Matrix Prepared by PECVD Method

Abstract

We report the successful synthesis of Ge clusters embedded in a-SiNy: H matrix prepared by the plasma enhanced chemical vapor deposition (PECVD) method. Chemical and microstructural characteristics of this granular thin film were analyzed using the infrared absorption, x-ray diffraction, Raman scattering, and transmission electron microscopy. Finally we discuss briefly the synthesis mechanism of this new material.