2019
DOI: 10.1016/j.ceramint.2019.06.017
|View full text |Cite
|
Sign up to set email alerts
|

Microstructural development and factors affecting the performance of a reaction-bonded silicon carbide composite

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
13
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 29 publications
(13 citation statements)
references
References 23 publications
0
13
0
Order By: Relevance
“…In some cases, when the carbon content of C/SiC preforms is supersaturated, the phenomenon of capillary channel blockage can be found in RB-SiC, resulting in the presence of residual carbon in RB-SiC. The residual carbon is detrimental to the properties of RB-SiC [ 23 ]. Therefore, the theoretical optimal value of carbon content in C/SiC preforms was calculated by using Equation (2) [ 16 ]: where μ (wt.%) is the maximum carbon content in C/SiC preform (avoiding the phenomenon of capillary channel blockage); Mc and Msic are the molar masses(g/mol) of carbon and SiC, respectively; Vsic1 (vol.%) is the volume fraction of SiC in the C/SiC preform; and W is the volume ratio of specimens before and after LSI.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In some cases, when the carbon content of C/SiC preforms is supersaturated, the phenomenon of capillary channel blockage can be found in RB-SiC, resulting in the presence of residual carbon in RB-SiC. The residual carbon is detrimental to the properties of RB-SiC [ 23 ]. Therefore, the theoretical optimal value of carbon content in C/SiC preforms was calculated by using Equation (2) [ 16 ]: where μ (wt.%) is the maximum carbon content in C/SiC preform (avoiding the phenomenon of capillary channel blockage); Mc and Msic are the molar masses(g/mol) of carbon and SiC, respectively; Vsic1 (vol.%) is the volume fraction of SiC in the C/SiC preform; and W is the volume ratio of specimens before and after LSI.…”
Section: Resultsmentioning
confidence: 99%
“…The presence of crystalline Si is due to excess Si during LSI process. After liquid Si infiltrated into the pores of C/SiC preform, part of Si reacted with carbon and the residual Si filled the pores [ 23 ]. With the increase of impregnation/carbonization cycles, the Si content gradually decreased, as was clearly indicated by the strongest diffraction peaks of Si, from crystal planes (111), (220) and (311) at 2θ of 28.4°, 47.3° and 56.1°, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The carbon density of the PF-infiltrated parts (C/SiC preform) is the decisive factor influencing the reaction sintering process, residual-free Si content, and the performance of the final Si/SiC composites. 46,50 By properly improving the carbon density during the PF infiltration, the residual Si in the final Si/SiC part could be reduced, thus improving the mechanical properties of the final samples. Nevertheless, the porosity could be too small to the channel for liquid silicon infiltrating with excessive carbon density, leading to the existence of residual carbon and a dramatic knockdown in the performance of Si/SiC samples.…”
Section: 22mentioning
confidence: 99%
“…[6][7][8] Additive manufacturing can be used to produce extremely complex and accurate 3D ceramic structures. To date, several 3D printing processes have been proposed to prepare ceramic parts, such as selective laser sintering, [9][10][11][12][13][14][15][16][17][18] stereolithography, [19][20][21][22][23][24][25] binder jetting, [26][27][28] fused deposition, 29,30 and direct ink writing (DIW). 31,32 Among the reported 3D printing methods, DIW is flexible, inexpensive, and time-saving, which is capable of building complex SiC ceramic structures.…”
Section: Introductionmentioning
confidence: 99%