Colossal magnetoresistance is of great fundamental and
technological
significance in condensed-matter physics, magnetic memory, and sensing
technologies. However, its relatively narrow working temperature window
is still a severe obstacle for potential applications due to the nature
of the material-inherent phase transition. Here, we realized hierarchical
La0.7Sr0.3MnO3 thin films with well-defined
(001) and (221) crystallographic orientations by combining substrate
modification with conventional thin-film deposition. Microscopic investigations
into its magnetic transition through electron holography reveal that
the hierarchical microstructure significantly broadens the temperature
range of the ferromagnetic–paramagnetic transition, which further
widens the response temperature range of the macroscopic colossal
magnetoresistance under the scheme of the double-exchange mechanism.
Therefore, this work puts forward a method to alter the magnetic transition
and thus to extend the magnetoresistance working window by nanoengineering,
which might be a promising approach also for other phase-transition-related
effects in functional oxides.