2021
DOI: 10.1021/acs.cgd.1c00698
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Microstructural Engineering of Solution-Processed Epitaxial La-Doped BaSnO3 Transparent Conducting Films

Abstract: Epitaxial La-doped BaSnO3 (BLSO) thin films were fabricated on a SrTiO3 (100) substrate by a cost-efficient and scalable solution deposition method. Microstructures and optoelectronic properties of the BLSO thin films can be controlled by the metal cation concentration (MCC) of the initially used precursor solution. It is found that thin films with a denser microstructure, lower resistivity, higher optical transmittance, and good thermal stability can be obtained from the solution with a lower MCC. The growth … Show more

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Cited by 12 publications
(5 citation statements)
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“…This is also reflected on the residual resistivity ratio (RRR) calculated from ρ­(300 K)/ρ­(150 K) resulting in smaller values (0.024) than MBE films . The same trend has been reported for other CSD-processed n -type TCO perovskite thin films when compared to their vacuum-processed counterparts. ,,,,, …”
Section: Resultssupporting
confidence: 58%
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“…This is also reflected on the residual resistivity ratio (RRR) calculated from ρ­(300 K)/ρ­(150 K) resulting in smaller values (0.024) than MBE films . The same trend has been reported for other CSD-processed n -type TCO perovskite thin films when compared to their vacuum-processed counterparts. ,,,,, …”
Section: Resultssupporting
confidence: 58%
“… 24 The same trend has been reported for other CSD-processed n -type TCO perovskite thin films when compared to their vacuum-processed counterparts. 33 , 35 , 36 , 38 , 52 , 53 …”
Section: Resultsmentioning
confidence: 99%
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“…5(a), was detected ranging from 250 to 6000 nm for the prepared BSWO thin films. In comparison, the transmittance of our previous (Ba,La)SnO 3 (BLSO), 33 Ba(Sn,Sb)O 3 (BSSO), 18 and Sn-doped In 2 O 3 (ITO) 4 thin films are also introduced. The overall transmittance shows a depressing tendency with the increment of W-doping content owing to the enhanced carrier reflection.…”
Section: Resultsmentioning
confidence: 99%
“…However, the reported µ e in La:BaSnO 3 thin films have only reached a maximum value of 183 cm 2 V −1 s −1 (n 1.2 × 10 20 cm −3 ) for epitaxial films grown by molecular beam epitaxy (MBE) [33]. Other growth techniques resulted in the following electron mobilities: 140 cm 2 V −1 s −1 (n 5.2 × 10 20 cm −3 ) for pulsed laser deposition (PLD) [27], 121 cm 2 V −1 s −1 (n 4.0 × 10 20 cm −3 ) for high-pressure magnetron sputtering [36], and 53 cm 2 V −1 s −1 (n 2.0 × 10 20 cm −3 ) for chemical solution deposition [39]. Various strategies to improve the mobility in La:BaSnO 3 epitaxial films have been explored.…”
mentioning
confidence: 99%