Microstructural evolution and formation of highly c-axis-oriented aluminum nitride films by reactively magnetron sputtering deposition

Laser technology for synthesis of AlN films: influence of the incident laser fluence on the films microstructure

“…Moreover, AlN films deposited on Si are promising as microelectronic components thanks to their high dielectric constant and thermal conductivity, thermal and chemical stability, and good lattice match with SiC and GaN. However, obtaining AlN films with definite structure and crystalline quality still remains a challenge for most deposition techniques, such as metal organic chemical vapor deposition [1], reactive magnetron sputtering [2,3] and pulsed laser deposition (PLD) [4][5][6][7]. Extensive research is still necessary to find out exactly how the crystallographic structure and degree of crystallinity of AlN films depend on the film preparation method and conditions.…”

Deposition Characteristics of AlN Thin Film Prepared by the Dual Ion Beam Sputtering System

“…However, no amorphous layer exists between the Al layer and the AlN layer in contrast to AlN films deposited by magnetron sputtering. 10 Figure 10 shows the plane-view TEM SAD patterns of AlN films grown on heated substrates of 300°C, with a 700 eV energy flux, and 55% N 2 concentrations (specimen B). This observation is consistent with Fig.…”

“…7 A variety of deposition methods have been used to prepare AlN films, including metal-organic chemical vapor deposition (MOCVD) 8 and physical vapor deposition. [9][10][11][12][13] Ion beam sputtering deposition 14 and ion beam-assisted deposition 15,16 have also been used.…”

Preparation of Oriented Aluminum Nitride Thin Films on Polyimide Films and Piezoelectric Response with High Thermal Stability and Flexibility

“…AlN piezoelectric films have played an increasing role in micro-and nanoelectromechanical systems (MEMS, NEMS), and in bulk acoustic wave (BAW) devices for resonators and filters in high-frequency communication components. [10] Generally, AlN films can be synthesized using several techniques such as reactive sputtering, [11,12] molecular beam epitaxy, [13] laser ablation, [14] and chemical vapor deposition. [15] Among these methods, the reactive sputtering technique is considered to be the method of choice, because of its easily deposited high (0001) orientation at relatively low temperature and compatibility with standard IC (integrated circuit) technology.…”