Microstructural investigation of ZnO films grown on (111) Si substrates by plasma-assisted molecular beam epitaxy

Epitaxial Growth of Bandgap Tunable ZnSnN2 Films on (0001) Al2O3 Substrates by Using a ZnO Buffer

“…However, growth of single crystal ZnO films on a cheaper c-Al 2 O 3 substrate has been widely reported. , Therefore, using the single crystal ZnO film as a buffer for growing single crystal ZnSnN 2 films on c-Al 2 O 3 is highly encouraging. Succeeding the crystal ZnSnN 2 films by using a ZnO buffer layer can also be an innovation for the substrate selection, because single crystal ZnO films were grown on various kinds of substrates. − …”

Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications

“…Therefore, many indium-free ZnO-based materials have increasingly studied as the alternative TCL in high efficiency LEDs due to their electrical and optical properties similar to ITO, better thermal stability, and smaller lattice mismatch to GaN [11][12][13]. ZnO-based thin films have been grown by several techniques such as sputtering [14], molecular beam epitaxy [15], metal-organic chemical vapor deposition [16], atomic layer deposition [17], E-beam evaporation [18], and pulsed laser deposition (PLD) [19]. Among these techniques, PLD is the ideal production technology for the growth of epitaxial ZnO-based thin films because it can keep the consistent composition of the original material which is preserved in the interaction and the oxygen plasma created by the pulsed laser is very energetic.…”

Influence of Zn/O ratio on structural, electrical and optical properties of ZnO thin films fabricated by plasma-assisted molecular beam epitaxy

“…However, preparation of high quality ZnO thin films are still difficult due to the unsuitable substrates and large number of intrinsic defects, impurities and dislocations introduced during growth, such as oxygen vacancies (V O ), interstitial zinc atoms (Zn i ), and hydrogen, etc. In order to resolve these problems, various deposition techniques, such as MBE, MOCVD, Magnetron sputtering, PLD, etc., have been used to obtain high quality ZnO thin films recent decades [5][6][7][8][9]. Among these growth techniques, molecular beam epitaxy (MBE) is proved to be the optimal method due to its ultra-high vacuum condition and high controllability.…”