Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD

Öztürk, M. Kemal; Çörekçí, S.; Tamer, Mehmet; Çetin, Saime Şebnem; Özçelik, Süleyman; Özbay, Ekmel

doi:10.1007/s00339-013-7857-2

Cited by 9 publications

(7 citation statements)

References 26 publications

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“…All kind of dislocations are dependent on lateral mosaic length, tilt and twist angles. As reported by Metzger et al [12], GaN films in (002) average twist angle is related with edge Burgers vector [b = 1/3 (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)] type dislocation density. Also average tilt angle, is related with monotonous Burgers vector b = (0001) screw type dislocation [11].…”

Section: Edge and Screw Dislocationsmentioning

confidence: 68%

“…As reported by Metzger et al [12], GaN films in (002) average twist angle is related with edge Burgers vector [b = 1/3 (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)] type dislocation density. Also average tilt angle, is related with monotonous Burgers vector b = (0001) screw type dislocation [11]. Burgers vector is formed by (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)] edge type dislocation surface.…”

Section: Edge and Screw Dislocationsmentioning

confidence: 68%

“…For S.C on the left of top GaN peak InGaN peak is approximately clear but as in S.A it is also not fully distorted. These undistorted InGaN peaks can be attributed to microstructural defects [10,11]. According to Vegard's law In content(x) can be calculated by the following formula:…”

Section: Xrd Analysismentioning

confidence: 99%

“…Also average tilt angle, is related with monotonous Burgers vector b = (0001) screw type dislocation [11]. Burgers vector is formed by (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)] edge type dislocation surface. Measured twist is gained from twist angle α twist .…”

Section: Edge and Screw Dislocationsmentioning

confidence: 99%

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Investigation of structural, optical and morphological properties of InGaN/GaN structure

et al. 2018

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In this study, InGaN/GaN structure is investigated in the temperature range of 300-500 °C with steps of 50 °C. InGaN/ GaN multi-quantum well structure is deposited on c-orientated sapphire wafer by metal organic chemical vapour deposition method. All the parameters except for temperature kept constant during growth period. InGaN/GaN structures with different In content are investigated by XRD technique. Their structural, optical and morphological characteristics are determined by high resolution X-ray diffraction, Fourier transform spectroscopy (FTIR), photo luminescence (PL), transmission and atomic force microscopy (AFM). According to FTIR and PL spectra's, it is noticed that band gap values coincide with blue region in the electromagnetic spectrum. As a result of transmission measurements it is seen that light is completely absorbed by the sample at approximately 390 nm. Using XRD technique, dislocation densities and strain are calculated. Full width at half maximum of the XRD peak values gained from X-ray diffraction are used in an alternative method called Williamson-Hall (W-H). Using W-H method, lateral and vertical crystal lengths and tilt angles are determined. Surface roughness parameters are investigated by AFM. Different properties of GaN and InGaN layers are compared as dependent on increasing temperature. According to AFM images it is seen that these structures have high surface roughness and large crystal size. All the results yielded from the mentioned methods are in good agreement with the previous works done by different authors.

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Section: Edge and Screw Dislocationsmentioning

confidence: 68%

Section: Edge and Screw Dislocationsmentioning

confidence: 68%

Section: Xrd Analysismentioning

confidence: 99%

Section: Edge and Screw Dislocationsmentioning

confidence: 99%

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Investigation of structural, optical and morphological properties of InGaN/GaN structure

et al. 2018

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“…Buffer layers like GaN and AlN are grown as mosaic layers and are characterized by their tilt and twist angles. The pit and score failures of these structures are related to these angles and significantly affect the performance [26].…”

Section: Xrd Analysismentioning

confidence: 99%

Examination of the temperature related structural defects of InGaN/GaN solar cells

Durukan

Bayal

Kurtuluş

et al. 2015

Superlattices and Microstructures

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a b s t r a c tIn this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution X-ray Diffraction (HRXRD) and an Atomic Force Microscope (AFM). The plane angles, mosaic crystal sizes, mixed stress, dislocation intensities of the structure of the GaN and InGaN layers are determined. According to the test results, there are no general characteristic trends observed due to temperature at both structures. There are fluctuating failures determined at both structures as of 350°C. The defect density increased on the GaN layer starting from 350°C and reaching above 400°C. A similar trend is observed on the InGaN layer, too.

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The most optimal barrier height of InGaN light-emitting diodes

Isfahani

Faez

2021

Appl. Phys. A

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Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD

Cited by 9 publications

References 26 publications

Investigation of structural, optical and morphological properties of InGaN/GaN structure

Investigation of structural, optical and morphological properties of InGaN/GaN structure

Examination of the temperature related structural defects of InGaN/GaN solar cells

The most optimal barrier height of InGaN light-emitting diodes

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