Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

Li, Hua; Sang, Jizhang; Liu, Chang; Lu, Hongbing; Cao, Juncheng

doi:10.2478/s11534-008-0032-2

Cited by 10 publications

(4 citation statements)

References 25 publications

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“…This material has some additional advantages compared to other large band-gap semiconductors; for example, its large exciton binding energy (about 60 meV) which is three times the binding energies of ZnSe and GaN [4]. This allows a stable exciton distribution and achieves efficient excitonic emission at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Three-Photon Absorption in Zno Film Using Ultra Short Pulse Laser

Jamal¹,

Hussein²,

Suhail³

2012

JMP

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The three-photon absorption (3PA) in nanostructure wide-band gap ZnO semiconductor material is observed under high intensity femtosecond Titanium-Sapphire laser of 800 nm wavelength excitation. The ZnO film was prepared by chemical spray pyrolysis technique with substrate temperature of 400˚C. The optical properties concerning the absorption, transmission, reflection, Raman and the photoluminescence spectra are studied for the prepared film. The structure of the ZnO film was tested with the X-ray diffraction and it was found to be a polycrystalline with recognized peaks oriented in (002), and (102). The measured of three photon absorption coefficient was found to be about 0.0166 cm 3 /Gwatt 2 , which is about five times higher than the bulk value. The fully computerized z-scan system was used to measure the nonlinear coefficients from the Gaussian fit of the transmitted laser incident.

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Section: Introductionmentioning

confidence: 99%

Three-Photon Absorption in Zno Film Using Ultra Short Pulse Laser

Jamal¹,

Hussein²,

Suhail³

2012

JMP

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“…refractive index n, extinction coefficient k, real dielectric constant ε r and imaginary dielectric constant ε i ), were studied within the range (200-800) nm for ZnO thin deposited by PLD technique. The absorbance spectra for ZnO thin films are shown in figure (4).…”

Section: Resultsmentioning

confidence: 99%

“…The ZnO nanostructures have many applications in gas sensors, UV detector and solar cell (1)(2)(3). This material has some additional advantages compared to other large band-gap semiconductors; for example, its large exciton binding energy (about 60 meV) which is three times the binding energies of ZnSe and GaN (4). This allows a stable exciton distribution and achieves efficient excitonic emission at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Study on physical properties of nanostructured ZnO prepared by pulse laser deposition

Raied K. Jamal,

Mohammed A. Hameed,

Kadhim A. Adem

2023

JWSM

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Zinc Oxide thin film of 2 μm thickness has been grown on glass substrate by pulsed laser deposition technique at substrate temperature of 500 oC under the vacuum pressure of 8×10-2 mbar. The optical properties concerning the absorption, and transmission spectra were studied for the prepared thin film. From the transmission spectra, the optical gap and linear refractive index of the ZnO thin film was determined. The structure of the ZnO thin film was tested with X-Ray diffraction and it was formed to be a polycrystalline with many peaks.

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“…Among them pulsed laser deposition (PLD) [140,141], sputtering [119,142], CVD [143], metalorganic chemical vapor deposition (MOCVD) [144], and MBE [145] can be used for depositing thin films of ZnO on various substrates and with different crystalline characteristics. MOCVD and MBE can promote epitaxial growth of ZnO if a material with lattice constants close to those of ZnO is chosen as substrate.…”

Section: Dense Zno Filmsmentioning

confidence: 99%