Microstructure and Electro‐Optical Properties of Evaporated Indium‐Oxide Films

Abstract

The microstructures and electro-optical properties of thermally evaporated indium-oxide films are given and discussed. It is shown that highly transparent and conducting films can be prepared at relatively low (-150~ substrate temperatures, with and without doping by tin. Results of stoichiometry measurements in conjunction with the Hall effect and crystal structure data suggest the existence of indium atoms with different valences in these films. This implies that the conduction mechanism in this material may be more complicated than hitherto assumed.

Electronic Relaxation in Indium Oxide Films Studied with Perturbed Angular Correlations

“…Temperature dependence of the electronic relaxation: All the thin film samples -except for Al 600a, Al 600b and Al 2 O 3 500 -showed a minimum of F C rel at 200-300 K, in agreement with previous results on pure and Sn-doped In 2 O 3 [2,4] and other oxides showing EC after-effects [1,2,8,17,18]. At a charge carrier density of 10 19 cm j3 (Mott criterion [22]) doped In 2 O 3 undergoes a metal-insulator transition.…”

“…The samples on Al (Al 600a, Al 600b) were produced by electron-gun evaporation of indium oxide powder in the presence of oxygen and indium [8]. Most samples were deposited by reactive sputtering of a metallic indium target in oxygen atmosphere [9].…”

High-quality indium oxide films at low substrate temperature

“…Depositions of fairly low films of In 2 O 3 and ITO by sputtering and evaporation at T s р200°C have been reported. 11,[13][14][15] In this letter, we report on the electrical and optical properties of In 2 O 3 films prepared at T s between room temperature ͑RT͒ and 200°C by PLD. These results were obtained with minimum effort because the technique entails fewer independent degrees of freedom thus making control of deposition parameters feasible at low T s .…”

Efficient photoluminescence from pulsed laser ablated nanostructured indium oxide films

“…From the observations, a fairly consistent picture emerges for explaining the increased film transmission up to 773 K, which is based upon oxygen incorporation and improved crystallinity. On post-deposition annealing, the oxygen incorporation occurs largely through the absorption into the oxygen deficient phase In 2 O 3−x to form In 2 O 3 [28,29]. It has been proposed that oxygen incorporation is a dominant reaction during annealing in atmosphere.…”