Microstructure and electronic properties of pulsed-discharge-deposited amorphous carbon-nitride films

Qin, Zongyi; Wang, Pei-Nan; Shen, Hong; Mi, Lan; Ying, Xuantong

doi:10.1016/j.diamond.2005.05.004

Cited by 3 publications

(6 citation statements)

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“…9 Hydrogenated carbon nitride films also exhibit remarkable field emission properties 10,11 and are being considered as cold cathode materials in vacuum microelectronics and flat panel display technologies. 12 It should be noted that in this manuscript we use the term carbon nitride film to describe any carbonbased film that also contains nitrogen atoms (and possibly hydrogen).…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, nitrogen doped carbonaceous films are replacing carbonaceous films as nanometer scale (<10 nm), wear-resistant hard disk coatings, and recorder heads in magnetic storage devices . Hydrogenated carbon nitride films also exhibit remarkable field emission properties , and are being considered as cold cathode materials in vacuum microelectronics and flat panel display technologies …”

Section: Introductionmentioning

confidence: 99%

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Growth and Microstructure of Nanoscale Amorphous Carbon Nitride Films Deposited by Electron Beam Irradiation of 1,2-Diaminopropane

2009

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The deposition and microstructure of nanoscale nitrogen containing carbon films produced by irradiating adsorbed 1,2-diaminopropane (1,2-DAP) molecules with >40 eV electrons has been studied. The growth rate of films deposited in the presence of a constant partial pressure of 1,2-DAP was directly proportional to the flux of both precursor 1,2-DAP molecules and the incident electrons, consistent with an electron beam induced deposition (EBID) process. Deposited films were highly textured and weakly adhered to the polycrystalline Au substrate. Complementary information on the electron stimulated decomposition of the precursor and the accompanying film growth was obtained from experiments performed under ultrahigh vacuum (UHV) on nanometer scale thick films of 1,2-DAP. Results from these UHV studies were consistent with the idea that decomposition was initiated by secondary electrons, produced by the interaction of the primary electron beam with the adsorbate layer and the substrate. Reactions of these low energy secondary electrons with adsorbed 1,2-DAP molecules were responsible for dehydrogenation as well as film growth. For prolonged electron exposures nitrile species were produced, supporting the idea that changes in the film’s microstructure and chemical composition were due to the effects of C−H and N−H, rather than C−C or C−N, bond cleavage. Collectively, our results indicate that EBID initially leads to the formation of a hydrogenated carbon nitride (a:C−N(H)) film. Further electron stimulated dehydrogenation ultimately yields an amorphous carbon−nitride film (a:C−N).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth and Microstructure of Nanoscale Amorphous Carbon Nitride Films Deposited by Electron Beam Irradiation of 1,2-Diaminopropane

2009

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“…Nitrogen incorporation to the amorphous carbon to form amorphous CN films gives rise to the appearance of a band around 1500 cm −1 further than the usual D and G bands. 35 However, the similarity of C-C and C-N vibrational frequencies makes it difficult to establish the way in which nitrogen is incorporated to the network skeletal. 36 The Raman spectra in the 1200-1600 cm −1 wavenumber range consists of a broad band peaking at 1500 cm −1 with a large asymmetry towards the low wavenumbers.…”

Section: Discussionmentioning

confidence: 99%

“…30,31 Both peaks dominate, varying the intensity, position and width, the Raman spectra of nanocrystalline and amorphous carbons. 32 Further, both G and D bands are also usually observed in Raman spectra of a-CN films; [33][34][35] however, C-N and C-C modes lie in a similar wavenumber range and thus are difficult to separate from each other. 36 Often these bands broaden and overlap each other, 37 which matches our observation.…”

Section: Resultsmentioning

confidence: 99%

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Hydrogen-free SiCN Films Obtained by Electron Cyclotron Resonance Plasma

Hernández

Cervera

Piqueras

et al. 2007

J. Electrochem. Soc.

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Electron cyclotron resonance plasma enhanced chemical vapor deposition of hydrogen-free SiCN films has been studied. Infrared and Raman spectroscopies were used for chemical characterization of deposited films, showing Si-N, Si-C, Si-Si, and C-N bonds in composition. Optical responses of the films between 1.5 and 4.5 eV were obtained by spectroscopic ellipsometry. Cathodoluminescence of the films shows mainly a broad band of emission at around 2.3 eV together with overlapped contributions at higher energies depending on the composition. Surface morphology and roughness has been investigated by atomic force microscopy. 18 The optical properties of SiCN suggest the behavior as a wide-bandgap semiconductor in the case of the crystalline phase, with potential applications for blue or ultraviolet optoelectronic devices.6,15 The variety of silicon carbonitride compositions obtained with any of these techniques allows one to think of these materials as tunable bandgap ones for applications in flat panel displays. Furthermore, SiCN nanorods exhibit promising characteristics as field emitters. 9,19More recently, with the introduction of new synthesis methods, other innovative applications have been described for this family of compounds, such as its feasibility in the fabrication of microelectrical mechanical systems ͑MEMS͒ working in high-temperature environments. 20,21 With the continuous shrinking size in integrated circuits technology there is a continuous effort in the search for materials with low dielectric constant for metal layer isolation. Further, due to its low dielectric constant, hydrogenated silicon carbonitrides prevent Cu diffusion in between the metallization layers. 22 The hydrogen incorporation in amorphous SiCN films results in a degradation of the mechanical properties of these films. 8In this work, we report the synthesis of amorphous hydrogen-free SiCN films by electron cyclotron resonance plasma at 850°C. Their composition and bonding structure have been studied by Fourier transform infrared ͑FTIR͒ and Raman spectroscopy. The surface morphology has also been studied by atomic force microscopy. The dielectric constant for different layer compositions has been obtained by spectroscopic ellipsometry and their potential optoelectronic applications explored by cathodoluminescence measurements. ExperimentalSiCN films were deposited on float zone ͑FZ͒ silicon wafers, polished on both sides, at 850°C in an electron cyclotron resonance plasma ͑ECR͒ reactor. The substrate holder was radiatively heated with a tungsten filament lamp and the temperature, 850°C, monitored with a pyrometer across a quartz window. The base pressure of the system was 10 −7 Torr. Low oxygen content FZ silicon wafers with a resistivity higher than 100 ⍀ cm were used as substrates. Before deposition, silicon substrates were chemically etched with a HF buffer solution. Gas mixtures of Ar, CH 4 , N 2 , and SiH 4 were employed in the deposition processes; the precursor gas flows were controlled by mass flow meters in such a way that a...

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Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures

Maluangnont,

Pulphol,

Chaithaweep

et al. 2023

RSC Adv.

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Microstructure and electronic properties of pulsed-discharge-deposited amorphous carbon-nitride films

Cited by 3 publications

References 42 publications

Growth and Microstructure of Nanoscale Amorphous Carbon Nitride Films Deposited by Electron Beam Irradiation of 1,2-Diaminopropane

Growth and Microstructure of Nanoscale Amorphous Carbon Nitride Films Deposited by Electron Beam Irradiation of 1,2-Diaminopropane

Hydrogen-free SiCN Films Obtained by Electron Cyclotron Resonance Plasma

Alternating current properties of bulk- and nanosheet-graphitic carbon nitride compacts at elevated temperatures

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