Microstructure and interface control of GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: Substrate-orientation dependence

Abstract

Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition Appl. Phys. Lett. 105, 102911 (2014); 10.1063/1.4895677 Aluminum doping induced columnar growth of homoepitaxial ZnO films by metalorganic chemical vapor deposition Appl.

Epitaxial growth of GaN films on unconventional oxide substrates

“…MgAl 2 O 4 is a crystal material which has a face-centered cubic unit cell with a lattice parameter of 0.8083 nm and belongs to the Fd3m space group. 29 Fig. 1 illustrates the crystal structure of MgAl 2 O 4 .…”

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

“…However, the MgAl 2 O 4 substrate has high partial Mg pressure [83,84]. If MOCVD or MBE is utilized to grow III-nitride films on MgAl 2 O 4 substrates, intense interfacial reaction will take place due to the diffusion of Mg atoms caused by the high growth temperature [86,87]. There is no doubt that interfacial reaction should be eliminated in order to grow high-quality group IIInitride films on MgAl 2 O 4 substrates.…”

Orientation domains in a monoclinic Mg–Al–O phase

“…In addition, Mg-Al-O oxides can be used as a substrate for epitaxial growth (Kuramata et al, 1995;Chen et al, 2000;Zeng et al, 2007;He et al, 2010He et al, , 2011Gatel et al, 2013), a catalyst (Feng et al, 2013) and a catalyst support (Li et al, 2013). For example, in order to grow high-quality GaN and ZnO films, MgAl 2 O 4 substrate is generally employed as the lattice mismatch between the substrate and the synthesized films is decreased compared with that of Al 2 O 3 substrate (Kuramata et al, 1995;Chen et al, 2000).…”