Microstructure and morphology of tin dioxide multilayer thin film gas sensors

Orthorhombic Pbcn SnO2 nanowires for gas sensing applications

“…6(a)), while in the orthorhombic phase, chains run in a zig-zag fashion ( Fig. 6(b)) [11]. In the case of Suito's proposed structure, each straight unit (chain fragment) contains two octahedra ( Fig.…”

“…6(c)). In a previous work [11], we associated the formation of these zig-zag octahedra chains to the presence of a periodical twinning effect. Indeed, a closer inspection of the structural features shown in Fig.…”

“…Nevertheless, only few data are available on its structural characteristics of this phase and a more detailed crystallographic analysis is still needed, specially, to detail the difference existing between these two reported data that present different lattice parameters. Recently, Sangaletti et al [11] reported on the existence of the orthorhombic phase formed at ambient pressure due to the local stress during the oxidation of small drops of liquid tin by the rheotaxial growth method [12]. Moreover, they also reported that, in this case, the CO sensing characteristics of so on prepared SnO 2 nanograins were improved.…”

Novel Pressure-Induced Structural Transformations of Inorganic Nanowires

“…Specifically, because SnO 2 exhibits high sensitivity for detecting CO and NO x gases, vigorous studies on SnO 2 -based gas sensors have been undertaken (Watson et al, 1993). In these studies, SnO 2 in orthorhombic structures was found to exhibit better sensitivity for specific gases than the tetragonal rutiletype structure (Arbiol et al, 2008;Sangaletti et al, 1997). However, natural SnO 2 , known as cassiterite, always exists as the rutile-type structure and it is generally difficult to obtain the orthorhombic phase directly from minerals (Chen et al, 2006).…”

Growth and Characterization of ZnO, SnO2 and ZnO/SnO2 Nanostructures from the Vapor Phase

“…Zinc oxide (ZnO) is an n-type wide band gap (3.20-3.43 eV at 298 K) semiconductor with a large exciton energy of 60 meV and a wurtzite structure [10,11]. Tin dioxide (SnO 2 ) is an n-type semiconductor of rutile crystal structure with a wide band gap (3.6-3.97 eV) and high power gas detecting/sensing capabilities at low operating temperatures [12,13].…”