Microstructure and Optical Properties of Oxygen-Annealed c-Si/a-SiO₂ Core–Shell Silicon Nanowires

Abstract

Core–shell silicon nanowires (Si-NWs) were synthesized by chemical vapor deposition (CVD) using SiH4 and H2 as precursors. The electron microscopy results revealed that the core shell Si-NW consists of core Si surrounded by thick amorphous silicon oxide (a-SiO x ). The diameter of core Si in a core–shell Si-NW was controlled by varying the oxygen flow rate and annealing time. The morphology of core shell Si-NWs is changed to silicon nanocoils (Si-NCs)/silicon nanonoodles (Si-NNs) after being annealed in oxygen atmosphere. The Fourier transform infrared spectroscopy (FTIR) study confirmed the changes of Si–Si and Si–O–Si vibration band and the intensity of Si–O–Si vibration mode increases with decreasing diameter of Si-NWs. The optical properties of core–shell Si-NWs are improved after being annealed in oxygen atmosphere. The chemical bonding and photoluminescence properties of oxygen annealed Si-NWs are also discussed in this article.

Amorphous silicon–carbon nanospheres synthesized by chemical vapor deposition using cheap methyltrichlorosilane as improved anode materials for Li-ion batteries

“…However, SiH 4 is expensive, toxic, ammable and explosive, limiting its industry applications. In addition, when SiH 4 , SiCl 4 and SiHCl 3 are used as the Si precursors, only pure Si materials can be obtained, [26][27][28] and thus C precursors have to be added additionally. Wilson and Dahn 23 prepared an Si-C composite with nanodispersed Si using CVD of both (CH 3 ) 2 SiCl 2 and benzene.…”

Enhanced localized surface plasmon resonance obtained in two step etched silicon nanowires decorated with silver nanoparticles

“…Peak centered at 812 cm À1 is related with stretching of O-Si-O bonds showing the bisector of Si atom in between two oxygen atoms. 23 Oxidized hydride deformation mode is located at 880 cm À1 . 24 This deformation related peak does not appear for one-step etched sample; hence, oxidized hydride deformation might be correlated with the presence of H 2 O 2 in the etching solution.…”

Effect of Rapid Thermal Annealing on the Photoluminescence from Si Nanocrystal Decorated Si Nanowires Array Grown by a Metal Assisted Chemical Etching Method

“…Note that the MACE grown Si NCs/NWs are covered by a thin layer of SiO x 5 , the defects in the Si/SiO x interface can also give rise to visible PL emission 9 . In order to better understand the origin of the visible PL from the MACE grown Si NWs, we have performed the RTA on the Si NCs decorated Si NWs samples at 800 °C.…”