Microstructure and Phase Behavior of a Quinquethiophene-Based Self-Assembled Monolayer as a Function of Temperature

Abstract

ARTICLEduring layer formation and that a gradual crystalline phase transition occurs upon temperature treatment.

Dynamics of Monolayer–Island Transitions in 2,7‐Dioctyl‐benzothienobenzthiophene Thin Films

“…[3] Typical preparation techniques for the formation of such functional monolayers are solution self-assembly or spin-coating. [4][5][6][7] In particular, for the latter, defined processing parameters need to be identified, otherwise sub-monolayer or multilayer films may form.…”

“…Organic thin-film transistors based on semiconducting molecular monolayers are of high scientific interest, as simple solution-based fabrication techniques allow establishing of complex electronic devices, such as code generators [1] or inverters; [2] however, these require high structural quality in terms of layer homogeneity and defined molecular packing. [3] Typical preparation techniques for the formation of such functional monolayers are solution self-assembly or spin-coating. [4][5][6][7] In particular, for the latter, defined processing parameters need to be identified, otherwise sub-monolayer or multilayer films may form.…”

Facile characterization of ripple domains on exfoliated graphene

“…Recently, frictional studies on low dimensional materials, such as carbon nanotubes (CNT), 1 graphene, [2][3][4][5] and organic monolayers, [6][7][8][9][10][11][12][13] have attracted much interest. Since these low dimensional materials are soft, they are prone to structural deformation during the fabrication process.…”

“…Symmetry breaking induced by structural deformation may lead to the deterioration of electrical or electro-mechanical performance for low dimensional materials due to the extremely high surface-tovolume ratios and strong crystallographic dependence of their physical properties. Recent studies revealed that characteristic ripple structures were usually formed in supported [13][14][15][16][17][18] and suspended graphene samples. [19][20][21] We have shown this in a recent study of the friction properties of exfoliated graphene deposited on a SiO 2 substrate, where we discovered the existence of anisotropic friction domains with a 180 • period by measuring the torsion of the AFM cantilever (T LAT ) during lateral scanning of a tip attached to the cantilever.…”

“…2 In this paper, we report that the ripple structures on monolayer graphene can be more effectively characterized by measuring cantilever torsion while scanning in the longitudinal direction (T LON ), i.e., along the cantilever arm, as opposed to conventional scanning in the perpendicular direction. Although a similar method has been used to determine grain orientation in polycrystalline organic semiconductors, [11][12][13] ripple structures on graphene have not been characterized by T LON , which produces a much clearer domain contrast than images of T LAT . Both normalized T LON and T LAT show rotation angle dependences that can be explained using the torsional component of the normal reaction force exerted by the graphene ripples.…”