2021
DOI: 10.1016/j.surfcoat.2021.127749
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Microstructure and properties of Ti2AlN thin film synthesized by vacuum annealing of high power pulsed magnetron sputtering deposited Ti/AlN multilayers

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Cited by 10 publications
(13 citation statements)
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“…Hence, it can be inferred that the decrease in the coefficient of friction in the R1-750 film is a consequence of these factors. 12…”
Section: Resultsmentioning
confidence: 99%
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“…Hence, it can be inferred that the decrease in the coefficient of friction in the R1-750 film is a consequence of these factors. 12…”
Section: Resultsmentioning
confidence: 99%
“…Hence, it can be inferred that the decrease in the coefficient of friction in the R1-750 film is a consequence of these factors. 12 Wear behaviour is generally considered a system property of the material and the environment rather than typical material properties such as melting point, electrical conductivity, modulus of elasticity, etc. 33 The wear rates and friction coefficients obtained from the wear tests of R1 films in dry environments were given in Figure 8.…”
Section: Tribological Propertiesmentioning
confidence: 99%
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“…Ti 2 AlN is a type of MAX phase, and its thin film has been successfully synthesized by physical vapor deposition (PVD) [10] or vacuum annealing (Ti+Al)/AlN multilayers [11]. In our previous work, a Ti 2 AlN thin film synthesized by the vacuum annealing of Ti/AlN multilayers deposited by HPPMS was shown to have a hardness of 32.5 ± 2.1 GPa [12]. In this work, we formed TiN/Ti 2 AlN multilayers by Coatings 2023, 13, 329 2 of 9 introducing Ti 2 AlN; this technique allowed us to study the potential of Ti 2 AlN for releasing the compressive residual stress of HPPMS-deposited TiN thin films.…”
Section: Introductionmentioning
confidence: 99%
“…As an electrode layer material, metal Ti thin film can be used as an adhesive layer to reduce contact resistance, or as a barrier layer to block the diffusion between the silicon substrate and the connecting line [1]. At the same time, it can serve as a buffer layer to reduce the stress between the coating and the silicon substrate, and improve the adhesion between the film and the substrate [2,3]. However, the deposition sites of semiconductor materials are often irregular parts such as grooves.…”
Section: Introductionmentioning
confidence: 99%