2005
DOI: 10.1016/j.jcrysgro.2004.10.060
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Microstructure and property of Czochralski-grown Si–TaSi2 eutectic in situ composite for field emission

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Cited by 15 publications
(8 citation statements)
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“…However, previous researches [10,11] demonstrated that this method has some shortages, e.g. the fibers are not distributed uniformly along with the radius because of the forced convection and the local temperature fluctuation resulting from the rates used for seed and crucible rotation; microstructure characteristic of the Si-TaSi 2 eutectic field emission materials at different solidification rates is not explicit; the inter-rod spacing of the TaSi 2 fibers cannot be adjusted on account of the restriction of relatively low growth rate.…”
Section: Introductionmentioning
confidence: 96%
“…However, previous researches [10,11] demonstrated that this method has some shortages, e.g. the fibers are not distributed uniformly along with the radius because of the forced convection and the local temperature fluctuation resulting from the rates used for seed and crucible rotation; microstructure characteristic of the Si-TaSi 2 eutectic field emission materials at different solidification rates is not explicit; the inter-rod spacing of the TaSi 2 fibers cannot be adjusted on account of the restriction of relatively low growth rate.…”
Section: Introductionmentioning
confidence: 96%
“…However, previous researches [9,12] demonstrate that this method has some shortages as following: the fibers are not distributed uniformly along with the radius because of the forced convection and the local temperature fluctuation, which resulted from the rates used for seed and crucible rotation, microstructure characteristic of Si-TaSi 2 eutectic field emission materials at different solidification rates is not explicit and the inter-rod spacing of TaSi 2 fibers can not be adjusted on account of the restriction of relatively low growth rate. It is reported that Si-TaSi 2 eutectic is one of the semiconductor metal eutectics (SME) and the inter-rod spacing may be the most important factor to affect its field emission properties [9].…”
Section: Introductionmentioning
confidence: 96%
“…The preparation and application of the Si-TaSi 2 eutectic in situ composite by the Czochralski (CZ) crystal growth technique have been reported [1][2][3][4]. However, TaSi 2 fibers are not uniformly distributed and the inter-rod spacing of the TaSi 2 fibers is relatively large, because of the restriction of the lower growth rate of the CZ method [2,5]. The inter-rod spacing of the TaSi 2 fibers and the good distribution character are the most important factors to affect this material's field-emission properties [2].…”
Section: Introductionmentioning
confidence: 99%