Microstructure and residual stress evolution in nanocrystalline Cu-Zr thin films

Interface fails and Young’s module approximation of multilayer flexible devices through finite element method

“…However, these applications lend to working conditions such as stretching or bending where thin elastic materials are susceptible to cumulate slow mechanical fails, which lead to brittle fractures, micro-cracking, debonding, or shear cracking [ [11] , [12] , [13] , [14] ]. Such fails are not easily detectable and result in electric damage of devices because of the interruption of electrical conduction [ [15] , [16] , [17] ]. Due to this, they could cause a decrease in PCE of OFSC or even a complete loss of operation.…”

Study of Internal Stress in Conductive and Dielectric Thick Films

“…In the literature, only methods for the measurement of internal stress in thin films in the field of hybrid integrated circuits and semiconductor chips are described. The main reason for the measurement of internal stress in thin films is the possibility of significant defect formation due to high internal stress in the range of GPa [ 27 , 28 , 29 , 30 ] and the fact that the inner structure of thin films is much more homogeneous compared to that of thick films, which contain more components and pores, and their surface is not smooth [ 4 , 31 ]. Internal stress in thin films can be measured by the following methods: laser scanning, multi-beam optical stress sensor, grid reflection, coherent gradient sensor (CGS), X-ray diffraction, and cantilever [ 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 ].…”