Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As)

Chang, Kee‐Chul; Pickrell, Gregory; Wohlert, D. E.; Epple, J. H.; Lin, Hong‐Cheu; Cheng, K. Y.; Hsieh, K. C.

doi:10.1063/1.1326466

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…Equation 1 was extensively applied to many systems of III-IV semiconductors. [2][3][4][5][6][7][8][9][10][11] In particular, Choquette et al 2 and Naone and Coldren 10 have found that in the GaAs/AlAs/GaAs system the oxidation rate in the AlAs layer increases with its thickness. In order to explain the thickness dependence in the wet oxidation of AlAs, Naone and Coldren 10 proposed an interfacial energy model by considering the force balance at the junction of the oxide, AlAs and GaAs, and derived a simple relation between the contact angle, or curvature, and the thickness of the AlAs layer.…”

Section: Introductionmentioning

confidence: 96%

Wet Oxidation in a Square Sandwich Composite of GaAs/AlAs/GaAs

Lee

Chou

2007

Journal of Elec Materi

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Wet oxidation in a square sandwich composite, GaAs/AlAs/GaAs, with varying thickness of the AlAs layer was investigated in a temperature range of 400°C-480°C. At a given temperature and time, the oxidation depth increases with increasing thickness of the AlAs layer. A model based on the boundary layer diffusion in a sandwich composite is used to interpret the thickness effect, and the theoretical predictions are in good agreement with the measured oxidation data. The theory also predicts a value of 0.53 eV ± 0.03 eV to be the difference in activation energies of water vapor diffusion in the central layer AlAs and the outer layers GaAs in the temperature range studied. Such a difference remains to be verified experimentally.

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Section: Introductionmentioning

confidence: 96%

Wet Oxidation in a Square Sandwich Composite of GaAs/AlAs/GaAs

Lee

Chou

2007

Journal of Elec Materi

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Contactless electroreflectance studies of surface potential barrier in AlGaN/n‐AlGaN structures with various Al concentrations

Janicki

Kudrawiec

Pakuła

et al. 2015

Physica Status Solidi (b)

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Contactless electroreflectance spectroscopy has been applied to study the surface potential barrier in AlxGa1−xN/n‐AlxGa1−xN structures with 0 ≤ x ≤ 0.25 grown by metaloorganic vapor phase epitaxy. A strong band‐to‐band transition followed by Franz–Keldysh oscillation (FKO) was clearly observed for all samples. The value of built‐in electric field was determined from the period of FKO, and the surface potential barrier was calculated with knowledge of the thickness of undoped AlxGa1−xN layer. For a set of GaN/n‐GaN structures with different thickness of undoped GaN layer (30–120 nm) an analysis of built‐in electric field gives the surface potential barrier of 0.59 ± 0.03 eV. For AlxGa1−xN(60 nm)/n‐AlxGa1−xN structures with 0.09 ≤ x ≤ 0.25 the surface potential barrier does not vary with Al concentration within the experimental accuracy. In this case the position of the Fermi level at the surface has been estimated to be ∼1.4 eV. The increase of surface potential barrier from 0.59 eV for GaN to 1.4 eV for AlGaN with 0.09 ≤ x ≤ 0.25 is attributed to low concentration of n‐type non‐intentional residual dopants in the undoped AlxGa1−xN layer as well as the presence of Al atoms at the surface and their higher sensitivity to oxidation and/or creation of defects states which are not present at GaN surfaces.

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Fabrication of GaP/Al–oxide distributed Bragg reflectors for the visible spectrum

Pickrell

Lin

Chang

et al. 2001

Applied Physics Letters

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High power, continuous wave, quantum cascade ring laser Appl. Phys. Lett. 99, 261104 (2011) Phase-locking regimes of photonic crystal nanocavity laser arrays Appl. Phys. Lett. 99, 251104 (2011) High coherent bi-chromatic laser with gigahertz splitting produced by the high diffraction orders of acousto-optic modulator used for coherent population trapping experiments Rev. Sci. Instrum. 82, 123104 (2011) A dual-mode quantum dot laser operating in the excited state Appl. Phys. Lett. 99, 231110 (2011) Additional information on Appl. Phys. Lett.Using very-low temperature ͑VLT͒ molecular-beam epitaxy ͑MBE͒, polycrystalline GaP/Al-oxide distributed Bragg reflectors ͑DBRs͒ have been fabricated. The use of high-energy band gap materials, such as GaP, allows for applications in the visible spectrum with minimal absorption of photons in the DBR. Through the use of VLT-MBE and control of the group-V overpressure, the microstructure can be controlled, resulting in either amorphous or polycrystalline material. Due to the nature of the amorphous material, the requirement of lattice matching is relaxed with no adverse effects to the underlying single crystal material. Two DBRs were fabricated, one reflecting at a wavelength of 550 nm and the other 480 nm. Using six pairs of polycrystalline GaP/Al-oxide, a reflectivity of ϳ95% was achieved indicating a high-quality DBR suitable for device use.

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Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As)

Cited by 5 publications

References 23 publications

Wet Oxidation in a Square Sandwich Composite of GaAs/AlAs/GaAs

Wet Oxidation in a Square Sandwich Composite of GaAs/AlAs/GaAs

Contactless electroreflectance studies of surface potential barrier in AlGaN/n‐AlGaN structures with various Al concentrations

Fabrication of GaP/Al–oxide distributed Bragg reflectors for the visible spectrum

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