2013
DOI: 10.1016/j.surfcoat.2012.12.017
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Microstructure characterization and deposition mechanism studies of ZrO2 thin films deposited by LI-MOCVD

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Cited by 6 publications
(2 citation statements)
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“…Tetragonal ZrO 2 is very common in MOCVD films, even though it is metastable at such temperatures. The stabilization of this phase is usually explained by fine crystallinity and low film thickness resulting in such deposition conditions that the nucleation rate exceeds the rate of surface diffusion [24]. According to EDS data, the Pb/Zr atomic ratio in the films is ∼ 1:25 (650 °C), 1:7 (700 °C), 1:4 (750 °C).…”
Section: Film Preparation and Examinationmentioning
confidence: 99%
“…Tetragonal ZrO 2 is very common in MOCVD films, even though it is metastable at such temperatures. The stabilization of this phase is usually explained by fine crystallinity and low film thickness resulting in such deposition conditions that the nucleation rate exceeds the rate of surface diffusion [24]. According to EDS data, the Pb/Zr atomic ratio in the films is ∼ 1:25 (650 °C), 1:7 (700 °C), 1:4 (750 °C).…”
Section: Film Preparation and Examinationmentioning
confidence: 99%
“…Therefore, thermal shock in the course of annealing can most often be avoided. To apply a thin layer of ZrO 2 on the 316L steel plate, the sol-gel method [14][15][16] can be employed; this is an inexpensive and efficient approach with a relatively low synthesis temperature and simple composition modification [17][18][19][20][21][22] compared with other vacuum deposition techniques [20][21][22][23][24][25][26]. In addition, the precursor solution must be prepared and then applied as a thin film onto a substrate.…”
Section: Introductionmentioning
confidence: 99%