In the present work, the sintering temperature was able to substantially influence the microstructure and electrical properties of the lead-free ceramic 0.88NaNbO 3 -0.12LiTaO 3. This composition without any acceptor doping presents a high mechanical quality factor, Q m , value of 1469 and a high Curie temperature of 305 °C by optimizing the sintering temperature at 1330 °C. We applied this material to make a device of disk-shaped piezoelectric transformers with a ring-dot structure and further focused on investigating the characteristics of the piezoelectric transformers. With matching load, a maximum efficiency of 92% occurs in the fundamental mode, and the maximum voltage gains are 5.5 and 3.7 for the fundamental and third radial vibration modes, respectively. The experimental results show a maximum output power of 10.5 W with a temperature rise of 27 °C. It is noteworthy that a high output power density (as high as 32.8 W cm −3 ) was obtained under a maximum input voltage of 180 V, which is comparable to the performance of PZT in a piezoelectric ceramic transformer device.