Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayer

Ho, Chia-Cheng; Chiou, Bi–Shiou; Chang, Li-Chun

doi:10.1016/j.surfcoat.2007.05.077

Cited by 5 publications

(5 citation statements)

References 18 publications

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“…It is argued that the positive TCC of the TiO 2 compensates the negative TCC of BST. The TiO 2 formation resulted from the presence of Cr interlayer [8] improves the temperature stability of the dielectric constant of BST films. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…1(b)-(e). Our previous work suggests that a β-TiO 2 secondary phase is formed after the BST/Cr/BST dielectrics are annealed in O 2 for 1 h [7], [8]. Hence, the thin layer on top of the BST is TiO 2 .…”

Section: Methodsmentioning

confidence: 97%

“…All agree with the formation of TiO 2 from the catalyst (Cr). Though the created new compounds of BST films are possible, Cr +3 (0.130 nm) is difficult to replace Ti +4 (0.145 nm) in the pervoskite structure, and the shift of Ti binding energy is not obvious [8]. Fig.…”

Section: Methodsmentioning

confidence: 99%

“…Previously, nanoferroelectric-based core-shell particles have been used for improving the characteristics of the ferroelectric dielectrics [10], and nanocomposite capacitor shows the promising dielectric properties with the ceramic fillers [11]. Our previous work [6]- [8] shows that parallel plate capacitors with an inserted nano-Cr interlayer exhibit lower leakage current and more temperature stable in the dielectric constant. However, there are few papers regarding the stabilities of the capacitors with the nano-Cr interlayer as the operation temperature and the applied voltage change.…”

Section: Improvement Of Electrical Properties Of Ba 07 Sr 03 Tio 3 mentioning

confidence: 99%

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Improvement of Electrical Properties of $\hbox{Ba}_{{\bf 0.7}}\hbox{Sr}_{\bf 0.3}\hbox{TiO}_{\bf 3}$ Capacitors With an Inserted Nano-Cr Interlayer

Chiou

Chang

2008

IEEE Trans. Nanotechnology

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The metal-insulator-metal (MIM) capacitors were prepared with Ba 0 .7 Sr 0 .3 TiO 3 /Cr/Ba 0 .7 Sr 0 .3 TiO 3 (BST/Cr/BST) dielectric and Pt electrode. The multilayer BST/Cr/BST was sputtered onto Pt/Ti/SiO 2 /Si substrate. The presence of nano-Cr interlayer affects the electrical properties of the capacitors. The temperature coefficient of capacitance (TCC) of capacitors with 2 nm Cr is about 69% of that of capacitors without Cr. In a previous work, the formation of the TiO 2 secondary phase was found after the BST/Cr/BST dielectrics were annealed at 1023 K in O 2 atmosphere for 1 h. It is suggested that the nano-Cr interlayer as a catalyst leads to the TiO 2 formation during the annealing in O 2 atmosphere. The negative value of TCC of BST can be compensated by the positive TCC of TiO 2 , and the temperature stability in the dielectric constant can be realized for capacitors with nano-Cr interlayer. The voltage stability of BST is also improved with the insertion of nanoCr interlayer, and the quadratic coefficient in voltage coefficient of capacitance (VCC) of Pt/BST/Cr(2 nm)/BST/Pt is about 30% of that of the BST capacitor without Cr. The effects of Cr thickness on TCC, VCC, dissipation factor, and leakage current density of Pt/BST/Cr/BST/Pt parallel plate capacitors are investigated.Index Terms-Ba 0 .7 Sr 0 .3 TiO 3 /Cr/Ba 0 .7 Sr 0 .3 TiO 3 (BST) capacitor, dissipation factor, nano-Cr interlayer, voltage coefficient of capacitance (VCC).

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 97%

Section: Methodsmentioning

confidence: 99%

Section: Improvement Of Electrical Properties Of Ba 07 Sr 03 Tio 3 mentioning

confidence: 99%

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Improvement of Electrical Properties of $\hbox{Ba}_{{\bf 0.7}}\hbox{Sr}_{\bf 0.3}\hbox{TiO}_{\bf 3}$ Capacitors With an Inserted Nano-Cr Interlayer

Chiou

Chang

2008

IEEE Trans. Nanotechnology

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“…Ferroelectric thin films, such as barium strontium titanate (BST), have shown great promise for the fabrication of tunable RF and microwave components, such as tunable microwave resonators, filters and phase shifters [1][2][3]. BST films also show low leakage current, high breakdown field, high time dependent dielectric breakdown (TDDB) and low fatigue and ageing [4]. The dielectric permittivity of BST can be tuned via an applied dc electric field.…”

Section: Introductionmentioning

confidence: 99%

Characterization of microwave dielectric properties of ferroelectric parallel plate varactors

Sui¹,

Wang²,

Zhang³

et al. 2008

J. Phys. D: Appl. Phys.

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A procedure to accurately evaluate microwave dielectric properties of parallel plate varactors fabricated on a BST thin film deposited by pulsed laser deposition on a platinized silicon substrate is presented. The reliability of the high-frequency properties of dielectric thin films extracted from the measured reflection coefficient S11 is mainly limited by how accurately the parasitic effects are eliminated from the measured data. The parasitic effects were effectively removed on evaluating the thin-film dielectric properties based on the good agreement between the experimental results measured with the parasitic model and the computer simulation data.

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Structural, Thermal and Electrochemical studies of Sm substituted CrFeO3 Nano‐Pervoskites

Ghoneim

Matsuda

Tan

2021

Journal of Alloys and Compounds

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Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayer

Cited by 5 publications

References 18 publications

Improvement of Electrical Properties of $\hbox{Ba}_{{\bf 0.7}}\hbox{Sr}_{\bf 0.3}\hbox{TiO}_{\bf 3}$ Capacitors With an Inserted Nano-Cr Interlayer

Improvement of Electrical Properties of $\hbox{Ba}_{{\bf 0.7}}\hbox{Sr}_{\bf 0.3}\hbox{TiO}_{\bf 3}$ Capacitors With an Inserted Nano-Cr Interlayer

Characterization of microwave dielectric properties of ferroelectric parallel plate varactors

Structural, Thermal and Electrochemical studies of Sm substituted CrFeO3 Nano‐Pervoskites

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