Despite extensive research and much
progress, it remains critical
and challenging to precisely grow nanowires structurally and dimensionally
uniform. Here, we present a focused-ion-beam (FIB) assisted approach
to controlling the ZnO nanowire growth with uniform diameters, height,
and high crystalline quality. Vertical-alignment is also achieved
on nonepitaxial substrates without the assistance of ZnO seeding layers
(e.g., silicon and c-plane sapphire substrates). The programmable
ability of FIB opens up new opportunities of creating complex patterns
in our approach. A new alloy catalyst Au–Ga is developed for
ZnO growth, with achievable narrow nanowire size distributions. Comparison
studies of growth behavior in the temperature range 880–940
°C for Au and Au–Ga catalysts reveal different growth
kinetics and rate-controlling mechanisms that are consistent with
the vertical-alignment and drastically improved nanowire uniformity
for FIB-assisted nanowire growth. Nanogenerators built with the improved
nanowire platform exhibit a 2.5-fold increase in thermal energy conversion,
demonstrating the promise of our approach for advanced functional
devices.