2008
DOI: 10.3365/met.mat.2008.10.631
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Microstructure Evolution and Resistivity of Cu(B) Alloy Films on Ti Underlayer at the Early Stage of Annealing at 500 ℃

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“…where ρ and V represent the individual resistivities and volume fractions, respectively, of the respective phases. As a result, the use of equation ( 3 scattering is the main contributor to the resistivity and that the effect of the heterogeneous grain boundary between the Al and Al 3 Ni grains is negligible, the dependence of the resistivity of the Al 3 Ni and Al phases on the grain size can be described using the following simplified equation [28]:…”
Section: Correlation Between Grain Size and Resistivity In Al-ni-allo...mentioning
confidence: 99%
“…where ρ and V represent the individual resistivities and volume fractions, respectively, of the respective phases. As a result, the use of equation ( 3 scattering is the main contributor to the resistivity and that the effect of the heterogeneous grain boundary between the Al and Al 3 Ni grains is negligible, the dependence of the resistivity of the Al 3 Ni and Al phases on the grain size can be described using the following simplified equation [28]:…”
Section: Correlation Between Grain Size and Resistivity In Al-ni-allo...mentioning
confidence: 99%