Microstructure evolution effects of helium redistribution in as-implanted silicon and Si0.8Ge0.2/Si heterostructues

Mörschbächer, M.J.; Silva, D.L. da; Fichtner, P.F.P.; Oliviero, E.; Behar, M.; Zawislak, F.C.; Holländer, B.; Luysberg, M.; Mantl, S.; Loo, Roger; Caymax, Matty

doi:10.1016/j.nimb.2004.01.146

Cited by 4 publications

(9 citation statements)

References 8 publications

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“…In the WDS measurements in Fig. 3, a Gaussian peak centered on the neon K␣ lines is clearly observed for the implantation at room temperature with a fluence of =5 ϫ 10 16 Ne cm −2 . This indicates that a certain amount of Ne is retained in the sample.…”

Section: Implantations At Room Temperaturementioning

confidence: 91%

“…No bubbles are observed even for the highest fluence ͑ =5ϫ 10 16 Ne cm −2 ͒. Either they are too small to be detected by Fresnel contrast or they are not formed.…”

Section: Implantations At Room Temperaturementioning

confidence: 93%

“…From the surface up to 50 nm, small bubbles of 1 -2 nm are observed. Their density is roughly constant, ͑3-4͒ ϫ 10 16 cm −3 , for fluences up to =2ϫ 10 16 Ne cm −2 and drastically increases up to about ͑1-2͒ ϫ 10 17 cm −3 , for =5ϫ 10 16 Ne cm −2 . Then, from 50 up to 250 nm larger bubbles are observed.…”

Section: Implantations At T I = 250°c and Annealingmentioning

confidence: 95%

“…This indicates that a certain amount of Ne is retained in the sample. As stated in the experimental procedure, the Ne content for the implant at RT with a fluence of =5ϫ 10 16 Ne cm −2 provides a calibration standard for comparative measurements of the Ne content to be further discussed.…”

Section: Implantations At Room Temperaturementioning

confidence: 99%

“…13 The discovery of this mechanism of defect formation gave rise to the deliberate use of cavities for strain relaxation: it has been shown that defects induced by the cavity formation can be used for very effective strain relaxation of pseudomorphic SiGe/ Si heterostructures. [14][15][16] Cavities are also used in the process of "Smart Cut®" ͑H implantation 17 or combination of He and H implantation [18][19][20] ͒ as a cutting tool for the production of silicon-on-insulator ͑SOI͒ structures. In addition, deep level transient spectroscopy ͑DLTS͒ measurements on diodes containing voids have shown the presence of deep levels localized near the middle of the band gap.…”

Section: Introductionmentioning

confidence: 99%

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Damage accumulation in neon implanted silicon

Oliviero

Peripolli

Amaral

et al. 2006

Journal of Applied Physics

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Damage accumulation in neon-implanted silicon with fluences ranging from 5 ϫ 10 14 to 5 ϫ 10 16 Ne cm −2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250°C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250°C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as ͕311͖ defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

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Section: Implantations At Room Temperaturementioning

confidence: 91%

“…No bubbles are observed even for the highest fluence ͑ =5ϫ 10 16 Ne cm −2 ͒. Either they are too small to be detected by Fresnel contrast or they are not formed.…”

Section: Implantations At Room Temperaturementioning

confidence: 93%

Section: Implantations At T I = 250°c and Annealingmentioning

confidence: 95%

Section: Implantations At Room Temperaturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Damage accumulation in neon implanted silicon

Oliviero

Peripolli

Amaral

et al. 2006

Journal of Applied Physics

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Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si(001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and Transmission Electron Microscopy Techniques

Calligaris,

Lang,

Bettini

et al. 2024

Adv Materials Technologies

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Residual crystalline defects on the subsurface of Xe‐implanted Si(001) and post‐annealed substrates are investigated by advanced X‐ray diffraction and transmission electron microscopy techniques. Local characterization highlights the features of recrystallization and structural evolution induced by thermal treatments resulting from the formation of gaseous Xe nanobubbles embedded in a heavily twinned surrounding Si matrix. Both mappings of conventional reciprocal space and X‐ray multiple‐beam diffraction exhibited different aspects from the kinematical and dynamical X‐ray theories, respectively, contributing to a better understanding and description approach of residual damage in ion‐beam implanted materials. A simple layered model is proposed based on the experimental Q‐Scans profiles and computational calculations, distinguishing host matrix structural strain artifacts from the Xe‐bubbles pressure probed by a Xe M4,5‐edge blue shift in EELS spectra. Bubble pressure is determined by extrapolating the equation of state for xenon at high temperatures. The study also supports an experimental constant CXeM‐edge for the ∆E ≅ C n theoretical expression.

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Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si

D’Angelo

Mirabella

Bruno

et al. 2008

Journal of Applied Physics

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The formation and growth of nanovoids in a C-doped Si layer after He+ implantation and thermal annealing are reported. A structure consisting of 240 nm of Si, 20 nm of Si doped with C at 0.8 at. %, and 240 nm of Si cap was realized by molecular beam epitaxy onto a 100 Si Czochralsky substrate. Three sets of samples were implanted with He+ at 30 keV and different doses of 81015, 31016, and 51016 cm−2 and subsequently annealed at 800 °C in N2 atmosphere. Cross-section transmission electron microscopy was used to determine the void size and location. The tensile strain of the C-doped layer was measured by high-resolution x-ray diffraction. Our studies report the double role of C in the formation and evolution of nanovoids. After the low dose implantation, the C-doped layer still shows tensile strain due to substitutional C, and voids are localized only within this layer. At higher implantation doses, all the C atoms have been displaced from substitutional sites. No more strain is present in the C-doped layer and the presence of large cavities in its neighborhood is strongly inhibited. This work shows how localized strain in epitaxial films can be effectively used to drive nanovoid formation and evolution

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Microstructure evolution effects of helium redistribution in as-implanted silicon and Si0.8Ge0.2/Si heterostructues

Cited by 4 publications

References 8 publications

Damage accumulation in neon implanted silicon

Damage accumulation in neon implanted silicon

Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si(001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and Transmission Electron Microscopy Techniques

Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si

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