Microstructure, microhardness and work function of in-situ Al-Cu composite processed by mechanical alloying by means of high-pressure torsion

Khisamov, R. Kh.; Khalikova, G. R.; Kistanov, Andrey A.; Korznikova, G. F.; Korznikova, Elena A.; Nazarov, K. S.; Sergeev, S. N.; Shayakhmetov, R. U.; Timiryaev, Rasim; Yumaguzin, Yu. M.; Mulyukov, R. R.

doi:10.1007/s00161-022-01145-0

Cited by 9 publications

(1 citation statement)

References 65 publications

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“… 42 When the device is at LRS and HRS states in Figure 4 i,k, the fitted slopes of I – V are both nearly 1.00, which indicated an ohmic conductive mechanism. The Cu electrode has a lower work function than TiO 2 , 44 so the interface effect has little contribution to the conductance of Cu electrode-based devices. Under positive bias, Cu 2+ ions can migrate from the top electrode to N–TiO 2 NRAs and can residue in the medium as isolated Cu isles.…”

Section: Resultsmentioning

confidence: 99%

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO₂-Based Memristive Devices

Yu,

Ding,

Ren

et al. 2024

ACS Omega

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Memristor-based neuromorphic computing is promising toward their potential application of handling complex parallel tasks in the period of big data. To implement brain-inspired applications of spiking neural networks, new physical architecture designs are needed. Here, a serial memristive structure (SMS) consisting of memristive devices with different top electrodes is proposed. Top electrodes Au, Cu, and Al are selected for nitrogen-doped TiO 2 nanorod array-based memristive devices. The typical I−V cycles, retention, on/off ratio, and variations of cycle to cycle of top electrode-dependent memristive devices have been studied. Devices with Cu and Al electrodes exhibit a retention of over 10 4 s. And the resistance states of the device with the Al top electrode are reliable. Furthermore, the conductive mechanism underlining the I−V curves is discussed in detail. The interfacetype mechanism and block conductance mechanism are illustrated, which are related to electron migration and ion/anion migration, respectively. Finally, the SMS has been constructed using memristive devices with Al and Cu top electrodes, which can mimic the spiking pulse-dependent plasticity of a synapse and a neuron body. The SMS provides a new approach to implement a fundamental physical unit for neuromorphic computing.

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Section: Resultsmentioning

confidence: 99%

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO₂-Based Memristive Devices

Yu,

Ding,

Ren

et al. 2024

ACS Omega

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First-principles and experimental study of structural, electronic, and enhanced dielectric response in Bi2Ca1.95Sm0.05CoO6 nanoparticles

Abbas,

Kamran,

Illahi

et al. 2023

Inorganic Chemistry Communications

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Microstructural, Mechanical, and Tribological Characteristics of Ceramic Reinforced Al/Cu Hybrid Matrix Composites

Esad Kaya,

Pelin Çağım Tokat Birgin

2024

Phys. Metals Metallogr.

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Microstructure, microhardness and work function of in-situ Al-Cu composite processed by mechanical alloying by means of high-pressure torsion

Cited by 9 publications

References 65 publications

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO₂-Based Memristive Devices

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO₂-Based Memristive Devices

First-principles and experimental study of structural, electronic, and enhanced dielectric response in Bi2Ca1.95Sm0.05CoO6 nanoparticles

Microstructural, Mechanical, and Tribological Characteristics of Ceramic Reinforced Al/Cu Hybrid Matrix Composites

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Microstructure, microhardness and work function of in-situ Al-Cu composite processed by mechanical alloying by means of high-pressure torsion

Cited by 9 publications

References 65 publications

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO2-Based Memristive Devices

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO2-Based Memristive Devices

First-principles and experimental study of structural, electronic, and enhanced dielectric response in Bi2Ca1.95Sm0.05CoO6 nanoparticles

Microstructural, Mechanical, and Tribological Characteristics of Ceramic Reinforced Al/Cu Hybrid Matrix Composites

Contact Info

Product

Resources

About

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO₂-Based Memristive Devices

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO₂-Based Memristive Devices