Microstructure of epitaxial layers deposited on silicon by ion assisted deposition

Krinke, J.; Küchler, G; Brendel, Rolf; Artmann, H.; Frey, W; Oelting, S.; Schulz, M.; Strunk, H. P.

doi:10.1016/s0927-0248(00)00133-1

Cited by 4 publications

(1 citation statement)

References 3 publications

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“…Therefore, various morphologies can be produced, for example surfaces containing trenches or facets. This technique can also be used in the field of solar cells, where patterns with facets are of interest [10].…”

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confidence: 99%

Etching of porous silicon in basic solution

Hamm¹,

Sakka

Ogata

2003

phys. stat. sol. (a)

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This study reveals that a silicon sample with a porous layer immersed in strong basic solution is etched in several steps according to the surface area of the various materials to be dissolved (nano/macroporous or bulk silicon). As a result it demonstrates the possibility to produce various silicon surface morphologies. These morphologies range from macropore structure to inverted pyramids with crystalline facets. The technique used was the immersion of porous silicon in basic solution and the parameters varied were the immersion time and the concentration of the solution. This is a simple and interesting method to produce a desired morphology of silicon. Furthermore, this work shows the limit of the porosity determination by the weight measurement method.

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confidence: 99%

Etching of porous silicon in basic solution

Hamm¹,

Sakka

Ogata

2003

phys. stat. sol. (a)

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High‐rate deposition of epitaxial layers for efficient low‐temperature thin film epitaxial silicon solar cells

Oberbeck

Schmidt

Wagner

et al. 2001

Progress in Photovoltaics

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Low–temperature deposition of Si for thin‐film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open‐circuit voltage of these solar cells. In contrast, ion‐assisted deposition produces Si films with a minority‐carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin‐film Si solar cell with a 20‐μm‐thick epitaxial layer achieves an open‐circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high‐temperature solar cell process steps. Copyright © 2001 John Wiley & Sons, Ltd.

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