Microstructures and electrical properties of lead zinc niobate–lead titanate–lead zirconate ceramics using microwave sintering

Li, Chenliang; Chou, Chen–Chia

doi:10.1016/j.jeurceramsoc.2005.02.001

Cited by 15 publications

(5 citation statements)

References 40 publications

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“…In this work, microwave-sintering technique was performed to prepare BST ceramics with smaller grain size and more uniform microstructure as compared to conventionally sintered (CS) samples. As a unique alternative to the CS processing, microwave processing has been successfully applied in synthesis, sintering and processing of various materials, [7][8][9][10][11] with advantages of more rapid and uniform heating rate, cost-effectiveness, lower sintering temperature, and improved quality for as-sintered products. 12 Nevertheless, Microwave-sintering (MWS) BST show high dielectric loss (tand > 0.1) at room temperature, which was believed to attribute to the oxygen loss during the vacuum sintering process.…”

Section: Introductionmentioning

confidence: 99%

Improved Energy Storage Properties Accompanied by Enhanced Interface Polarization in Annealed Microwave‐Sintered BST

et al. 2015

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Microwave‐sintering (MWS) technique was employed to fabricate dense (Ba0.4Sr0.6)TiO3 (BST) ceramics. With respect to the high dielectric loss at room temperature, induced by the formation of oxygen defects during the MWS under vacuum atmosphere (−60 kPa), the as‐sintered samples were thermally annealed in air to reduce tanδ and recover the insulating performance. Accompanied by the decreased tanδ, the energy storage properties for annealed MWS BST were optimized, with increasing energy density (γ) from 0.77 to 1.15 J/cm3 and energy efficiency (η) from 60% to 82%. The lower oxygen vacancy concentrations were believed to account for the enhanced insulating characteristics of grain boundaries and contribute to the improved properties after annealing. Electrical characterization of grain and grain boundary by impedance spectroscopy demonstrated that the annealing preferentially modified the grain boundary. In addition, resistances extracted from the high temperature impedance analysis were found to be inadequate for evaluating the electrical characteristics of materials affected by extrinsic mechanisms, such as the interfacial polarization. For comparison, annealing effect on energy storage properties were also discussed for conventionally sintered BST.

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Section: Introductionmentioning

confidence: 99%

Improved Energy Storage Properties Accompanied by Enhanced Interface Polarization in Annealed Microwave‐Sintered BST

et al. 2015

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“…It was reported that PbO might segregate to form an amorphous layer or second phases at grain boundaries. [19][20][21][22][23] A semiquantitative TEM-EDS study of the grain boundary showed that grain boundaries possess large amounts of PbO and ZnO, as shown in Table I. The result indicates that PbO and ZnO form an intergranular layer in the present PBZNZT material system.…”

Section: Resultsmentioning

confidence: 74%

“…PBZNZT ceramics were prepared using the ASMC method, which effectively minimizes pyrochlore phase generation. 19,20) On the other hand, the patterns of BNKT ceramics primarily exhibited a perovskite tetragonal structure, as shown in Fig. 1.…”

Section: Resultsmentioning

confidence: 98%

“…3(a). 20 This implies that the strength of grain boundaries is higher than that of grains in BNKT ceramics. This may be attributed to the evaporation of Bi 2 O 3 during the sintering of the BNKT ceramics at 1150 C for 2 h, which reduces the grain strength of materials.…”

Section: Resultsmentioning

confidence: 99%

“…The specimens were prepared by the A-site-element sequential mixing columbite (ASMC) method. [19][20][21][22] Following calcination, the reground powders were pressed into discs with a diameter of 10 mm and a thickness of 1 mm. The sintering process was performed at 1150 C for 2 h using a double crucible that contained PbZrO 3 powder to prevent the evaporation of PbO.…”

Section: Methodsmentioning

confidence: 99%

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Correlation of Microstructures and Conductivities of Ferroelectric Ceramics Using Complex Impedance Spectroscopy

Chen

Chou

Tseng

et al. 2010

Jpn. J. Appl. Phys.

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The microstructures and conductivities of lead-free ceramics [Bi 0:5 (Na 1Àx K x ) 0:5 ]TiO 3 with x ¼ 0:18 (BNKT) and lead-based ceramics of x(0.94PbZn 1=3 Nb 2=3 O 3 + 0.06BaTiO 3 ) + (1 À x )PbZr y Ti 1Ày O 3 with x ¼ 0:5, y ¼ 0:52 (PBZNZT) were investigated. Experimental results show that the activation energy of grain boundary conductivity is higher than that of grain conductivity for the BNKT system, indicating that the Bi 2 O 3 evaporation of grains induces an easy conduction path through grains. However, the activation energy of grain boundary conductivity is lower than that of grain conductivity for the PBZNZT system, which might be attributed to the charged particles in the amorphous phase at grain boundaries, participating in the conduction process. A conduction model of both grain and grain boundary conductivities was proposed, and the microstructural characteristics and AC impedance data of ferroelectric ceramics correlate fairly well, suggesting that impedance spectroscopy is an efficient characterization technique for the grain boundary engineering of ferroelectric ceramics. #

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Microstructural, dielectric, piezoelectric and ferroelectric properties of xPZN–PZT ternary ceramics

Yao

et al. 2023

J Mater Sci: Mater Electron

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Microstructures and electrical properties of lead zinc niobate–lead titanate–lead zirconate ceramics using microwave sintering

Cited by 15 publications

References 40 publications

Improved Energy Storage Properties Accompanied by Enhanced Interface Polarization in Annealed Microwave‐Sintered BST

Improved Energy Storage Properties Accompanied by Enhanced Interface Polarization in Annealed Microwave‐Sintered BST

Correlation of Microstructures and Conductivities of Ferroelectric Ceramics Using Complex Impedance Spectroscopy

Microstructural, dielectric, piezoelectric and ferroelectric properties of xPZN–PZT ternary ceramics

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