Microwave AlGaN/GaN HFETs

Trew, R.J.; Bilbro, Griff L.; Kuang, W.; Liu, Y.; Yin, Hong

doi:10.1109/mmw.2005.1417998

Cited by 80 publications

(30 citation statements)

References 17 publications

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“…The role of the buffer is to restrict the electron flow to within the channel and adapt the GaN lattice structure to the lattice structure of the substrate. A good review of the physics of the AlGaN/GaN HEMT is given in [7].…”

Section: Gan Hemtmentioning

confidence: 99%

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Komiak

2015

IEEE Microwave

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Section: Gan Hemtmentioning

confidence: 99%

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Komiak

2015

IEEE Microwave

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“…This has been mainly in response to the growing demand for high-frequency amplifiers, offering higher power amplification, both in civilian and military applications. AlGaN/GaN HFETs operate at exceptionally high-power densities [1], therefore sizable self-heating negatively impacts the reliability and power rating of these transistors [2]. This is due to the fact that the elevation in the channel temperature leads to degradation in electrical transport properties of the channel, reduction in the effective Schottky barrier height of the gate, and strain relaxation of the barrierto-channel heterointerface [2].…”

Section: Introductionmentioning

confidence: 99%

Impact of Isolation-Feature Geometry on Self-Heating of AlGaN/GaN HFETs

Loghmany

Valizadeh

Record

2014

IEEE Trans. Electron Devices

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Correlation between the isolation-feature geometry and average channel temperature of AlGaN/GaN heterojunction field-effect transistors (HFETs) is investigated. The reported transistors of this paper were realized on a variety of isolationfeature geometries resembling the following structures: 1) island; 2) fin; 3) comb; and 4) ladder. The average channel temperature of the devices from all categories of the fabricated AlGaN/GaN HFETs was studied using finite element analysis in ANSYS Mechanical. To check the validity of these analyses, results were compared with the experimental data. According to these studies, a less pronounced self-heating is observed in devices, which enjoyed a closer proximity between the drain-edge of the gate and side-walls of the isolation feature. Among these devices, for the same moderate dc bias power of 5 W/mm (i.e., per millimeter width of the transistor), ∼60 K decrease in the average channel temperature is observed. IndexTerms-AlGaN/GaN heterojunction field-effect transistor (HFET), channel temperature, isolation geometry, self-heating.

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“…For the demands of amplifiers, wide band gap semiconductors emerge as the first choice. In these, the AlGaN/GaN high electron mobility transistor (AlGaN/GaN HEMT) is very attractive for power application because of its high breakdown voltage, high carrier density, high saturation velocity and excellent thermal conductivity of the SiC substrate [1,2] . In recent years, there have been several reports on the high signal performance of AlGaN/GaN HEMTs as discrete devices with very high output power densities.…”

Section: Introductionmentioning

confidence: 99%

An X-band GaN combined solid-state power amplifier

Chi¹,

Hao²,

Feng³

et al. 2009

J. Semicond.

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Based on a self-developed AlGaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AlGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under V ds = 27 V, V gs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm (14 W), and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.

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Microwave AlGaN/GaN HFETs

Cited by 80 publications

References 17 publications

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Impact of Isolation-Feature Geometry on Self-Heating of AlGaN/GaN HFETs

An X-band GaN combined solid-state power amplifier

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