Microwave-Assisted Size Control of Colloidal Nickel Nanocrystals for Colloidal Nanocrystals-Based Non-volatile Memory Devices

Yadav, Manoj; Velampati, Ravi Shankar R.; Mandal, Debaprasad; Sharma, Rohit

doi:10.1007/s11664-018-6200-2

Cited by 12 publications

(5 citation statements)

References 19 publications

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“…Since the conventional perovskite oxide ferroelectric materials face difficulties in attempt to scaling down and their CMOS integration, the discovery of ferroelectricity in HfO altered the research direction since the last decade as it shows excellent ferroelectricity at ultrathin scales [1][2][3][4]. Ahead, for memory device applications, high memory window is an important parameter [5][6][7]. The memory window is associated with gap between positive and negative remnant polarization (P r ) values.…”

Section: Introductionmentioning

confidence: 99%

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer

Yadav

Kashir

et al. 2021

Nanotechnology

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The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO2 based ferroelectric devices. The atomic layer deposited devices continue suffering from a poor bottom interfacial condition, since the formation of bottom interface is severely affected by atomic layer deposition and annealing process. Herein, the formation of bottom interfacial layer was controlled through deposition of different bottom electrodes (BE) in device structure W/HZO/BE. The transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy analyses done on devices W/HZO/W and W/HZO/IrO x suggest the strong effect of IrO x in controlling bottom interfacial layer formation while W/HZO/W badly suffers from interfacial layer formation. W/HZO/IrO x devices show high remnant polarization (2P r) ∼ 53 μC cm−2, wake-up free endurance cycling characteristics, low leakage current with demonstration of low annealing temperature requirement as low as 350 °C, valuable for back-end-of-line integration. Further, sub-5 nm HZO thicknesses-based W/HZO/IrO x devices demonstrate high 2P r and wake-up free ferroelectric characteristics, which can be promising for low power and high-density memory applications. 2.2 nm, 3 nm, and 4 nm HZO based W/HZO/IrO x devices show 2P r values 13.54, 22.4, 38.23 μC cm−2 at 4 MV cm−1 and 19.96, 30.17, 48.34 μC cm−2 at 5 MV cm−1, respectively, with demonstration of wake-up free ferroelectric characteristics.

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Section: Introductionmentioning

confidence: 99%

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer

Yadav

Kashir

et al. 2021

Nanotechnology

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“…The process can further be optimised, and is potentially useful for the practical realisation of NVM devices. [5] thermal oxidation 7.4 SiO 2 (5.5 nm)/SiO 2 (13 nm) 1.9 V/±4 V Si [2] ball milling and chemical etching 6 SiO 2 (2 nm)/SiO 2 (7 nm) 0.5 V/±5 V Co [6] r e flux heating method 5 SiO 2 (4 nm)/Al 2 O 3 (10 nm) 8 V/±6 V Ni [3,14] microwave assisted synthesis 4 SiO 2 (4 nm)/Al 2 O 3 (10 nm) 1.3 V/±5 V Co [11] e-beam evaporation and thermal annealing 2 SiO 2 (3 nm)/HfO 2 (…”

Section: Discussionmentioning

confidence: 99%

“…To date flash memory are the foremost non‐volatile memory (NVM) devices. In order to continuously boost the performance and reduce the manufacturing cost of flash memory devices, numerous processes have been studied in recent years [1, 2, 3, 4]. The silicon quantum‐dots (QDs) based NVM device shows the memory window of 0.75 V [2].…”

Section: Introductionmentioning

confidence: 99%

Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application

Yadav

Velampati

Mandal

2019

Micro & Nano Letters

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The present work details the synthesis of cobalt quantum-dots (Co QDs) with size downscaling to 1-2 nm and their applications in non-volatile memory (NVM) devices. The process of colloidal synthesis is simple and provides the control over a wide range of QDs size. The scaled-down colloidal Co QDs are applied for the NVM device fabrication. Colloidal synthesised Co QDs are spin-coated over silicon dioxide wafer for the fabrication of floating-gate NVM devices. Capacitance-voltage (C-V) and capacitance-time (C-t) measurements of the fabricated NVM device indicate a low voltage operation of device. A sweep voltages as small as 1.2-4 V lead to a flat band voltage shift of 0.35-1.5 V, evidencing the low operating voltage and low power NVM applications. Further, retention characteristics show a robust retention by fabricated NVM device. In addition, C-V measurements are done for the several samples in order to study the process repeatability. The work also is compared with the other processes for the floating gate memory device.

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“…However, they have apparent disadvantages, such as long reaction time, poor product uniformity, and easy sintering or agglomeration of nanostructures. Different from the traditional heated forms, microwave synthesis overcomes the above-mentioned drawbacks due to its high efficiency and immobilization. , In particular, carbon-based materials can selectively absorb microwaves and preferentially convert them into thermal energy, and the formed localized superhot spots allow and accelerate the occurrence of various organic/inorganic chemical reactions. As is well known, adjusting the energy band structure of the material is beneficial to the absorption and conversion of light energy.…”

Section: Introductionmentioning

confidence: 99%

Rapid Synthesis of Oxygen-Deficient MoO_3–x-rGO Composites for Synergistic Photothermal Seawater Desalination and Photocatalytic Sterilization

Sun

Qiu

Fang

et al. 2023

ACS Sustainable Chem. Eng.

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The development of efficient photothermal desalination devices is of great significance in solving the problem of freshwater shortage. The design and preparation of efficient photothermal materials with a broad light absorption range have been extensively studied. However, the performance of photothermal catalysts for synergistic purification of complex seawater is still facing significant challenges. Therefore, we report the rapid preparation of MoO 3−x -rGO composites with synergistic photothermal and photocatalytic performance by the solid-phase microwave thermal shock method. The superhot spots created on the surface of microwave-reduced rGO induce the formation of MoO 3−x with oxygen vacancies. Due to the localized surface plasmon resonance (LSPR) effect, the near-infrared photothermal and photocatalytic properties of MoO 3−x -rGO catalysts are greatly improved. When the optimal composite catalyst (GMW-3) is illuminated by one sunlight, the seawater evaporation rate and photothermal conversion efficiency can reach 1.58 kg m −2 h −1 and 87.2%, respectively. Meanwhile, the GMW-3 composite evaporator shows excellent antibacterial performance under the synergistic effect of photothermal and photocatalysis during the evaporation process. These findings expand a new insight and platform to design efficient catalysts for large-scale seawater desalination and purification.

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Microwave-Assisted Size Control of Colloidal Nickel Nanocrystals for Colloidal Nanocrystals-Based Non-volatile Memory Devices

Cited by 12 publications

References 19 publications

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer

Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application

Rapid Synthesis of Oxygen-Deficient MoO_3–x-rGO Composites for Synergistic Photothermal Seawater Desalination and Photocatalytic Sterilization

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Microwave-Assisted Size Control of Colloidal Nickel Nanocrystals for Colloidal Nanocrystals-Based Non-volatile Memory Devices

Cited by 12 publications

References 19 publications

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer

Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application

Rapid Synthesis of Oxygen-Deficient MoO3–x-rGO Composites for Synergistic Photothermal Seawater Desalination and Photocatalytic Sterilization

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High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer

Rapid Synthesis of Oxygen-Deficient MoO_3–x-rGO Composites for Synergistic Photothermal Seawater Desalination and Photocatalytic Sterilization