Microwave complementary doped-channel field-effect transistors

Performance of AlGaInP/InGaAs enhancement/depletion-mode pseudomorphic doping-channel field-effect transistors

“…Apparently, two linear regions appear in the transfer characteristic due to the existence of the two individual channel layers in the depletion-mode device. As compared with the previous InGaP/InGaAs HEMT and DCFET, the studied device exhibits higher drain current, higher transconductance, and larger gate turn-on voltage [3,4].…”

“…GaAs-based heterostructure field-effect transistors (HFETs), such as electron mobility transistors (HEMTs) and doped-channel field effect transistors (DCFETs), have been considered to be the promising devices in signal amplifier, microwave, gas detector, and digital integrated circuits [1][2][3][4][5][6]. As to the HEMTs, though the maximum transconductance value may be relatively high due to the high carrier mobility, the average transconductance was low and they suffered from small gate voltage swing [3].…”

“…These devices were not suitable for large signal and linear circuit applications. On the other hand, DCFETs employing an undoped (or low-doped) large energy-gap material as a Schottky barrier layer could increase broad gate voltage swing for improving the device linearity and reducing the higher order harmonic terms in linear amplifier applications [4,5]. As considering the carrier conduction of GaAs-based HFETs, it is proper to replace GaAs layer with an InGaAs strain layer as an active channel because of the lower effective electron mass, higher electron mobility, and higher peak electron velocity [3,7].…”